©2004 Fairchild Semiconductor Corporation
October 2004
RMPA5251 Rev. D
RMPA5251
RMPA5251
4.90–5.85 GHz InGaP HBT Linear Power Amplifier
General Description
The RMPA5251 power amplifier is designed for high
performance WLAN applications in the 4.9 to 5.35 and 5.15
to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3
x 0.9 mm package with internal matching on both input and
output to 50
Ω
minimizes next level PCB space and allows
for simplified integration. The on-chip detector provides
power sensing capability while the logic control provides
power saving shutdown options. The PA’s low power
consumption and excellent linearity are achieved using our
InGaP Heterojunction Bipolar Transistor (HBT) technology.
Features
• 4.9 to 5.85 GHz Operation
• 27dB small signal gain
• 26dBm output power @ 1dB compression
• 2.5% EVM at 18.0dBm modulated power out
• 3.3V single positive supply operation
• Adjustable bias current operation
• Two power saving shutdown options (bias and logic
control)
• Integrated power detector with >18dB dynamic range
• Low profile 16 pin 3 x 3 x 0.9 mm standard QFN leadless
package
• Internally matched to 50
Ω
• Minimal external components
• Optimized for use in IEEE 802.11a
WLAN applications
Device
Electrical Characteristics
1,3
802.11a OFDM
Modulation (with 176ms burst time, 100ms idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth
Electrical Characteristics
1
Single Tone
Parameter Minimum Typical Maximum Minimum Typical Maximum Unit
Frequency
10
4.90 5.35 5.15 5.85 GHz
Supply Voltage 3.0 3.3 3.6 3.0 3.3 3.6 V
Gain 27 28 dB
Total Current @ 18dBm P
OUT
250 240 mA
Total Current @ 19dBm P
OUT
260 250 mA
EVM @ 18dBm P
OUT
2
2.5 2.5 %
EVM @ 19dBm P
OUT
2
3.5 3.5 %
Detector Output @ 19dBm P
OUT
450 500 mV
Detector Threshold
4
5.0 5.0 dBm
P
OUT
Spectral Mask Compliance
5, 6
21.0 20.0 dBm
Parameter Minimum Typical Maximum Minimum Typical Maximum Unit
Frequency
10
4.90 5.35 5.15 5.85 GHz
Supply Voltage 3.0 3.3 3.6 3.0 3.3 3.6 V
Gain
7
27 27.5 dB
Total Quiescent Current
7, 11
140–220 140–220 mA
Notes:
1. VC1, VC2, VC3, VM1, VM2, VM3 = 3.3 Volts, Tc=25°C, PA is constantly biased, 50
Ω
system.
2. Percentage includes system noise floor of EVM=0.8%.
3. Not measured 100% in production.
4. P
OUT
measured at P
IN
corresponding to power detection threshold.
5. Measured at P
IN
at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
6. P
IN
is adjusted to point where performance approaches spectral mask requirements.
7. 100% Production screened.
8. Bias Current is included in the total quiescent current.
9. VL is set to logic level for device off operation.
10. See Application information on Page 3.
11. See Data on Page 8.
