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IRF3707PBF

P1-P3P4-P6P7-P9P10-P11
www.irf.com 1
7/20/04
IRF3707PbF
IRF3707SPbF
SMPS MOSFET
HEXFET
®
Power MOSFET
Benefits
l Ultra-Low Gate Impedance
l Very Low R
DS(on)
l Fully Characterized Avalanche Voltage
and Current
V
DSS
R
DS(on)
max I
D
30V 12.5mΩ 62A
Notes through are on page 10
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
Drain-Source Voltage 30 V
V
GS
Gate-to-Source Voltage ± 20 V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 62
I
D
@ T
C
= 70°C Continuous Drain Current, V
GS
@ 10V 52 A
I
DM
Pulsed Drain Current 248
P
D
@T
C
= 25°C Maximum Power Dissipation 87 W
P
D
@T
C
= 70°C Maximum Power Dissipation 61 W
Linear Derating Factor 0.59 mW/°C
T
J
, T
STG
Junction and Storage Temperature Range -55 to + 175 °C
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
D
2
Pak
IRF3707S
TO-220AB
IRF3707
TO-262
IRF3707L
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.73
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
R
θJA
Junction-to-Ambient (PCB mount)* ––– 40
IRF3707LPbF
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
Applications
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
PD -95528
IRF3707S/LPbF
2 www.irf.com
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Symbol Parameter Typ. Max. Units
E
AS
Single Pulse Avalanche Energy ––– 213 mJ
I
AR
Avalanche Current ––– 62 A
Avalanche Characteristics
S
D
G
Diode Characteristics
62
248
A
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Forward Transconductance 37 ––– ––– S V
DS
= 15V, I
D
= 49.6A
Q
g
Total Gate Charge ––– 19 ––– I
D
= 24.8A
Q
gs
Gate-to-Source Charge ––– 8.2 ––– nC V
DS
= 15V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 6.3 ––– V
GS
= 4.5V
Q
oss
Output Gate Charge ––– 18 27 V
GS
= 0V, V
DS
= 15V
t
d(on)
Turn-On Delay Time ––– 8.5 ––– V
DD
= 15V
t
r
Rise Time ––– 78 ––– I
D
= 24.8A
t
d(off)
Turn-Off Delay Time ––– 11.8 ––– R
G
= 1.8Ω
t
f
Fall Time ––– 3.3 ––– V
GS
= 4.5V
C
iss
Input Capacitance ––– 1990 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 707 ––– V
DS
= 15V
C
rss
Reverse Transfer Capacitance ––– 50 ––– pF ƒ = 1.0MHz
V
SD
Diode Forward Voltage
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
––– 0.88 1.3 V T
J
= 25°C, I
S
= 31A, V
GS
= 0V
––– 0.8 ––– T
J
= 125°C, I
S
= 31A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 39 59 ns T
J
= 25°C, I
F
= 31A, V
R
=20V
Q
rr
Reverse Recovery Charge ––– 49 74 nC di/dt = 100A/µs
t
rr
Reverse Recovery Time ––– 42 63 ns T
J
= 125°C, I
F
= 31A, V
R
=20V
Q
rr
Reverse Recovery Charge ––– 62 93 nC di/dt = 100A/µs
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
––– 0.027 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 9.0 12.5 V
GS
= 10V, I
D
= 15A
––– 12.6 17 V
GS
= 4.5V, I
D
= 12A
V
GS(th)
Gate Threshold Voltage 1.0 ––– 3.0 V V
DS
= V
GS
, I
D
= 250µA
––– ––– 20
µA
V
DS
= 24V, V
GS
= 0V
––– ––– 100 V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– 200 V
GS
= 16V
Gate-to-Source Reverse Leakage ––– ––– -200
nA
V
GS
= -16V
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
mΩ
IRF3707S/LPbF
www.irf.com 3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
10
100
1000
3.0 4.0 5.0 6.0 7.0 8.0
V = 15V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 175 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
62A
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
3.5V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
3.5V
20µs PULSE WIDTH
Tj = 175°C
VGS
TOP 10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
P1-P3P4-P6P7-P9P10-P11

IRF3707PBF

Mfr. #:
Buy IRF3707PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 62A TO-220AB
Lifecycle:
New from this manufacturer.
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