V
RRM
= 50 V - 1000 V
I
F
= 15 A
Features
• Types up to 1000 V V
RRM
GBU Package
• Ideal for printed circuit board
• High surge overload rating
• Glass passivated chip junction
• High case dielectric strength 1500 V
RMS
Mechanical Data
Case: Molded plastic body over passivated junctions
Mounting position: Any
Silicon Bridge
Rectifier
• High temperature soldering guaranteed: 260⁰C/ 10
seconds, 0.375(9.5mm) lead length
Terminals: Plated leads, solderable per MIL-STD-750
Method 2026 guaranteed
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
GBU15J thru GBU15M
Parameter Symbol Unit
Repetitive peak reverse voltage
V
RRM
V
RMS reverse voltage
V
RMS
V
DC blocking voltage
V
DC
V
Continuous forward current
I
F
A
Operating temperature
T
j
°C
Storage temperature
T
stg
°C
Parameter Symbol Unit
Diode forward voltage
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
°C/W
μA
2.2
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
15 15 15
240 240 240
600 1000
700
1000
500
800
55
-55 to 150 -55 to 150
-55 to 150 -55 to 150 -55 to 150
GBU15J GBU15K
1.1 1.1
-55 to 150
Conditions
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤ 100 °C
Conditions
GBU15J GBU15K GBU15M
800
560420
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
A
V
R
= 50 V, T
j
= 25 °C
I
F
= 15 A, T
j
= 25 °C
Reverse current
I
R
V
F
V
R
= 50 V, T
j
= 125 °C
500 500
600
5
GBU15M
1.1
2.2 2.2
www.genesicsemi.com
1
