OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VS-10BQ015TRPBF

P1-P3P4-P6P7-P7
Document Number: 94110 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Nov-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Schottky Rectifier, 1.0 A
VS-10BQ015PbF
Vishay Semiconductors
FEATURES
• Ultralow forward voltage drop
• Optimized for OR-ing applications
• Guard ring for enhanced ruggedness and long
term reliability
• 125 °C T
J
operation (V
R
< 5 V)
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The VS-10BQ015PbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
PRODUCT SUMMARY
Package SMB (DO-214AA)
I
F(AV)
1 A
V
R
15 V
V
F
at I
F
0.32 V
I
RM
12 mA at 100 °C
T
J
max. 125 °C
Diode variation Single die
E
AS
1 mJ
Cathode
Anode
SMB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 1.0 A
V
RRM
15 V
I
FSM
t
p
= 5 μs sine 140 A
V
F
1.0 Apk, T
J
= 125 °C 0.32 V
T
J
Range - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-10BQ015PbF UNITS
Maximum DC reverse voltage V
R
15
V
Maximum working peak reverse voltage V
RWM
25
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
L
= 84 °C, rectangular waveform 1.0 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
140
A
10 ms sine or 6 ms rect. pulse 40
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1 A, L = 2 mH 1.0 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.0 A
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94110
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Nov-10
VS-10BQ015PbF
Vishay Semiconductors
Schottky Rectifier, 1.0 A
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(2)
Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
1 A
T
J
= 25 °C
0.35
V
2 A 0.44
1 A
T
J
= 125 °C
0.32
2 A 0.40
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.5
mA
T
J
= 100 °C 12
Threshold voltage V
F(TO)
T
J
= T
J
maximum
-V
Forward slope resistance r
t
-m
Typical junction capacitance C
T
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz), 25 °C 390 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
(1)
- 55 to 125
°C
Maximum storage temperature range T
Stg
- 55 to 150
Maximum thermal resistance,
junction to lead
R
thJL
(2)
DC operation
See fig. 4
36
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation 80
Approximate weight
0.10 g
0.003 oz.
Marking device Case style SMB (similar to DO-214AA) V1C
dP
tot
dT
J
-------------
1
R
thJA
--------------<
Document Number: 94110 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Nov-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
VS-10BQ015PbF
Schottky Rectifier, 1.0 A
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
10
1
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
0
0.1
0.2 0.4 0.6 0.8 1.0
T
J
= 100 °C
T
J
= 75 °C
T
J
= 25 °C
94110_01
10
1
0.1
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
0
0.01
15312
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
69
94110_02
1000
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
10
15312
69
T
J
= 25 °C
94110_03
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Single pulse
(thermal resistance)
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
100
94110_04
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P1-P3P4-P6P7-P7

VS-10BQ015TRPBF

Mfr. #:
Buy VS-10BQ015TRPBF
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-10BQ015-M35BT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet