BYG10M-M3/TR

BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y
www.vishay.com
Vishay General Semiconductor
Revision: 15-Jan-14
1
Document Number: 89472
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Avalanche SMD Rectifier
FEATURES
Low profile package
Ideal for automated placement
Controlled avalanche characteristics
Glass passivated junction
Low reverse current
High surge current capability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
AEC-Q101 qualified
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per J-STD-002
and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Note
BYG10Y for commercial grade only
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.5 A
V
RRM
200 V, 400 V, 600 V, 800 V,
1000 V, 1600 V
I
FSM
30 A
I
R
1.0 μA
V
F
1.15 V
E
R
20 mJ
T
J
max. 150 °C
Package DO-214AC (SMA)
Diode variations Single die
DO-214AC (SMA)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT
Device marking code BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y
Maximum repetitive peak reverse voltage V
RRM
200 400 600 800 1000 1600 V
Average forward current I
F(AV)
1.5 A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
I
FSM
30 A
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
I
(BR)R
= 1 A, T
J
= 25 °C (for BYG10D thru BYG10M)
I
(BR)R
= 0.4 A, T
J
= 25 °C (for BYG10Y)
E
R
20 mJ
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C
BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y
www.vishay.com
Vishay General Semiconductor
Revision: 15-Jan-14
2
Document Number: 89472
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Notes
(1)
Mounted on epoxy-glass hard tissue
(2)
Mounted on epoxy-glass hard tissue, 50 mm
2
35 μm Cu
(3)
Mounted on Al-oxide-ceramic (Al
2
O
3
), 50 mm
2
35 μm Cu
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT
Maximum
instantaneous
forward voltage
(1)
I
F
= 1 A
T
J
= 25 °C V
F
1.1
V
I
F
= 1.5 A 1.15
Maximum DC
reverse current
V
R
= V
RRM
T
J
= 25 °C
I
R
1
μA
T
J
= 100 °C 10
Maximum reverse
recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
s
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT
Typical thermal resistance, junction to lead R
JL
25 °C/W
Typical thermal resistance, junction to ambient
R
JA
(1)
150
°C/WR
JA
(2)
125
R
JA
(3)
100
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
BYG10D-M3/TR 0.064 TR 1800 7" diameter plastic tape and reel
BYG10D-M3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel
BYG10DHM3/TR
(1)
0.064 TR 1800 7" diameter plastic tape and reel
BYG10DHM3/TR3
(1)
0.064 TR3 7500 13" diameter plastic tape and reel
0.001
0.01
0.1
1
10
100
0 0.5 1.0 1.5 2.0 2.5 3.0
Forwar
d Voltage (V)
Forward Current (A)
T
J
= 150 °C
T
J
= 25 °C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Average Forward Cu
rrent (A)
R
θJA
125 K/W
R
θJA
150 K/W
V
R
= V
RRM
Half Sine-Wave
R
θJA
25 K/W
BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y
www.vishay.com
Vishay General Semiconductor
Revision: 15-Jan-14
3
Document Number: 89472
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Reverse Recovery Time vs. Forward Current
Fig. 7 - Reverse Recovery Charge vs. Forward Current
1
10
100
1000
25 50 75 100 125 150
Reverse Current (µA)
Junction Temperature (°C)
V
R
= V
RRM
0
50
100
150
200
250
300
350
400
25 50 75 100 125 150
V
R
= V
RRM
P
R
- Limit at 100 % V
R
Reverse Power Dissipation (mW)
Junction Temperature (°C)
P
R
- Limit at 80 % V
R
0
5
10
15
20
25
30
0.1 1 10 100
f = 1 MHz
Reverse Voltage (V)
Diode Capacitance (pF)
0
0
1000
2000
3000
4000
5000
0.2 0.4 0.6 0.8
Reverse Recovery Time (ns)
Forward Current (A)
1.0
T
A
= 100 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 75 °C
T
A
= 50 °C
I
R
= 0.5 A, i
R
= 0.125 A
0
0
400
800
1200
1600
2000
0.2 0.4 0.6 0.8
Reverse Recovery Charge (nC)
Forward Current (A)
1.0
T
A
= 100 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 75 °C
T
A
= 50 °C
I
R
= 0.5 A, i
R
= 0.125 A

BYG10M-M3/TR

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1.5A,1000V VGSC-STD Avalanche SMD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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