1SS417,L3M

1SS417
1
Schottky Barrier Diode Silicon Epitaxial
1SS417
1SS417
1SS417
1SS417
Start of commercial production
2003-06
1.
1.
1.
1. Applications
Applications
Applications
Applications
High-Speed Switching
2.
2.
2.
2. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
SOD-923
1: Cathode
2: Anode
fSC
1: Cathode
2: Anode
2014-07-08
Rev.3.0
1SS417
2
3.
3.
3.
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Peak reverse voltage
Reverse voltage
Peak forward current
Average rectified current
Power dissipation
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Operating temperature
Symbol
V
RM
V
R
I
FM
I
O
P
D
I
FSM
T
j
T
stg
T
opr
Note
(Note 1)
(Note 2)
Rating
45
40
200
100
100
1
125
-55 to 125
-40 to 100
Unit
V
mA
mA
mW
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Note 2: Measured with a 10 ms pulse.
4.
4.
4.
4. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Forward voltage
Forward voltage
Forward voltage
Reverse current
Total capacitance
Symbol
V
F(1)
V
F(2)
V
F(3)
I
R
C
t
Test Condition
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
V
R
= 40 V
V
R
= 0 V, f = 1 MHz
Min
Typ.
0.28
0.36
0.56
15
Max
0.62
5
Unit
V
V
V
µA
pF
5.
5.
5.
5. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 5.1
5.1
5.1
5.1 Marking
Marking
Marking
Marking
2014-07-08
Rev.3.0
1SS417
3
6.
6.
6.
6. Usage Considerations
Usage Considerations
Usage Considerations
Usage Considerations
Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
7.
7.
7.
7. Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
Fig.
Fig.
Fig.
Fig. 7.1
7.1
7.1
7.1 SOD-923 (Unit: mm)
SOD-923 (Unit: mm)
SOD-923 (Unit: mm)
SOD-923 (Unit: mm) Fig.
Fig.
Fig.
Fig. 7.2
7.2
7.2
7.2 fSC (Unit: mm)
fSC (Unit: mm)
fSC (Unit: mm)
fSC (Unit: mm)
2014-07-08
Rev.3.0

1SS417,L3M

Mfr. #:
Manufacturer:
Toshiba
Description:
Schottky Diodes & Rectifiers X34 FSC SBDiode (LF), IR=5uA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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