HN4C51J(TE85L,F)

HN4C51J
2014-03-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN4C51J
Audio Frequency General Purpose Amplifier Applications
z High voltage : V
CEO
= 120V
z High h
FE
: h
FE
= 200 to 700
z Excellent h
FE
linearity
: h
FE
(I
C
= 0.1mA) / h
FE
(I
C
= 2mA) = 0.95 (typ.)
z Low noise : NF = 1dB(typ.)
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 Common)
Characteristic Symbol Rating Unit
Collector-base voltage V
CBO
120 V
Collector-emitter voltage V
CEO
120 V
Emitter-base voltage V
EBO
5 V
Collector current I
C
100 mA
Base current I
B
20 mA
Collector power dissipation P
C
* 300 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating. Power dissipation per element should not exceed 200mW.
Electrical Characteristics
(Ta = 25°C) (Q1,Q2 Common)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
= 120V, I
E
= 0 0.1 μA
Emitter cut-off current I
EBO
V
EB
= 5V, I
C
= 0 0.1 μA
DC current gain h
FE
V
CE
= 6V, I
C
= 2mA 200 700
Collector-emitter saturation voltage V
CE
I
C
= 10mA, I
B
= 1mA 0.3 V
Transition frequency f
T
V
CE
= 6V, I
C
= 1mA 100 MHz
Collector output capacitance C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz 3.0 pF
Noise figure NF
V
CE
= 6 V, I
C
= 0.1 mA
f = 1 kHz, R
G
= 10 kΩ
1.0 dB
Marking Equivalent Circuit
(Top View)
1.EMITTER1
2.BASE
3.EMITTER2
4.COLLECTOR2
5.COLLECTOR1
(E1)
(B)
(E2)
(C2)
(C1)
JEDEC
JEITA
TOSHIBA 2-3L1A
Weight: 0.014g (typ.)
Unit: mm
33
4
5
Q1
Q2
1
23
Start of commercial production
2000-08
HN4C51J
2014-03-01
2
(Q1,Q2 Common)
HN4C51J
2014-03-01
3
(Q1,Q2 Common)
AMBIENT TEMPERATURE Ta (°C)
P
C
* – Ta
COLLECTOR POWER DISSIPATION
P
C
(mW)
0
0
100
300
200
500
400
150 100 125 50 7525 175
*: Total Rating

HN4C51J(TE85L,F)

Mfr. #:
Manufacturer:
Toshiba
Description:
Bipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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