© Semiconductor Components Industries, LLC, 2014
February, 2014 Rev. 13
1 Publication Order Number:
MUR820/D
MUR805G, MUR810G,
MUR815G, MUR820G,
MUR840G, MUR860G,
MURF860G, SUR8820G,
SUR8840G
Switch-mode Power
Rectifiers
This series is designed for use in switching power supplies,
inverters and as free wheeling diodes.
Features
Ultrafast 25 and 50 Nanosecond Recovery Time
175°C Operating Junction Temperature
Epoxy Meets UL 94 V0 @ 0.125 in
Low Forward Voltage
Low Leakage Current
Reverse Voltage to 600 V
ESD Ratings:
Machine Model = C (> 400 V)
Human Body Model = 3B (> 16,000 V)
SUR8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ULTRAFAST RECTIFIERS
8.0 AMPERES, 50600 VOLTS
1
3
4
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
TO220AC
CASE 221B
STYLE 1
MARKING DIAGRAMS
A = Assembly Location
Y = Year
WW = Work Week
U8XX = Device Code
xx = 05, 10, 15, 20, 40, or 60
G=PbFree Package
KA = Diode Polarity
AY WWG
U8xx
KA
TO220 FULLPAK
CASE 221AG
STYLE 1
AYWWG
MURF860
KA
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol
MUR/SUR8
Unit
805 810 815 820 840 860
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50 100 150 200 400 600 V
Average Rectified Forward Current
Total Device, (Rated V
R
), T
C
= 150°C
I
F(AV)
8.0 A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz), T
C
= 150°C
I
FM
16 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
100 A
Operating Junction Temperature and Storage Temperature Range T
J
, T
stg
65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol
MUR/SUR8
Unit
805 810 815 820 840 860
Maximum Thermal Resistance, JunctiontoCase
R
q
JC
3.0 2.0 °C/W
Thermal Resistance, JunctiontoCase
MURF860
R
q
JC
4.75
°C/W
Thermal Resistance, JunctiontoAmbient
R
q
JA
73 °C/W
Thermal Resistance, JunctiontoAmbiente
MURF860
R
q
JA
75
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol
MUR/SUR8
Unit
805 810 815 820 840 860
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 8.0 A, T
C
= 150°C)
(i
F
= 8.0 A, T
C
= 25°C)
v
F
0.895
0.975
1.00
1.30
1.20
1.50
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, T
J
= 150°C)
(Rated DC Voltage, T
J
= 25°C)
i
R
250
5.0
500
10
mA
Maximum Reverse Recovery Time
(I
F
= 1.0 A, di/dt = 50 A/ms)
(I
F
= 0.5 A, i
R
= 1.0 A, I
REC
= 0.25 A)
t
rr
35
25
60
50
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
http://onsemi.com
3
MUR805G, MUR810G, MUR815G, MUR820G, SUR8820G
Figure 1. Typical Forward Voltage
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
0.2 0.50.3 0.7
30
0.1
0.3
0.2
2.0
1.0
100
20
7.0
3.0
0.5
5.0
50
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
1.2
V
R
, REVERSE VOLTAGE (VOLTS)
06040 100 120
1000
0.1
0.01
10
100
T
J
= 175°C
I
R
20 80 200
Figure 2. Typical Reverse Current*
T
A
, AMBIENT TEMPERATURE (°C)
0
12
2.0
6.0
4.0
14
I
F(AV)
0
20 40 60 80 200
T
C
, CASE TEMPERATURE (°C)
140 150
0
2.0
1.0
3.0
5.0
4.0
I
180
Figure 3. Current Derating, Case
Figure 4. Current Derating, Ambient
0
1.0
6.0
10
0
1.0 2.0
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Power Dissipation
0.4
0.7
10
70
0.9 1.1
100°C
T
J
= 175°C
25°C
160
180140
1.0
, REVERSE CURRENT ( A)
100°C
25°C
170160
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if V
R
is sufficiently below rated V
R
.
P
, AVERAGE FORWARD CURRENT (AMPS)
T
J
= 175°C
i
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
3.0 4.0 10
5.0
2.0
RATED V
R
APPLIED
dc
SQUARE WAVE
m
SQUARE WAVE
0.6
0.8 1.0
100 120 140 160 180
8.0
10
dc
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
5.0 6.0 7.0 8.0 9.0
3.0
4.0
9.0
8.0
7.0
7.0
6.0
8.0
10
9.0
SQUARE WAVE
dc
SQUARE WAVE
dc
R
q
JA
= 16°C/W
R
q
JA
= 60°C/W
(NO HEAT SINK)

MUR810

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Rectifiers 100V 8A UltraFast
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union