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SI4462DY-T1-GE3

P1-P3P4-P6
Vishay Siliconix
Si4462DY
Document Number: 72093
S09-0705-Rev. C, 27-Apr-09
www.vishay.com
1
N-Channel 200-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• PWM Optimized for fast Switching
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
200
0.480 at V
GS
= 10 V
1.50
0.510 at V
GS
= 6.0 V
1.45
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4462DY-T1-E3 (Lead (Pb)-free)
Si4462DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
SD
SD
SD
GD
D
G
S
N-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
200
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
1.50 1.15
A
T
A
= 70 °C
1.20 0.92
Pulsed Drain Current
I
DM
5
Single Avalanche Current
L = 0.1 mH
I
AS
1.5
Single Avalanche Energy
E
AS
0.11 mJ
Continuous Source Current (Diode Conduction)
a
I
S
2.1 1.1 A
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
2.5 1.3
W
T
A
= 70 °C
1.6 0.85
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
40 50
°C/W
Steady State 70 85
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
20 24
www.vishay.com
2
Document Number: 72093
S09-0705-Rev. C, 27-Apr-09
Vishay Siliconix
Si4462DY
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
2.0 4 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 200 V, V
GS
= 0 V
1
µA
V
DS
= 200 V, V
GS
= 0 V, T
J
= 55 °C
5
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 10 V
5A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 1.5 A
0.39 0.480
Ω
V
GS
= 6.0 V, I
D
= 1.45 A
0.420 0.510
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 1.5 A
5S
Diode Forward Voltage
a
V
SD
I
S
= 2.1 A, V
GS
= 0 V
0.8 1.2 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= 100 V, V
GS
= 10 V, I
D
= 1.5 A
69
nCGate-Source Charge
Q
gs
0.9
Gate-Drain Charge
Q
gd
1.9
Gate Resistance
R
g
3.7 Ω
Tur n - On D el ay Tim e
t
d(on)
V
DD
= 100 V, R
L
= 100 Ω
I
D
≅ 1.0 A, V
GEN
= 10 V, R
g
= 6 Ω
10 15
ns
Rise Time
t
r
12 20
Turn-Off Delay Time
t
d(off)
10 15
Fall Time
t
f
15 25
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.1 A, dI/dt = 100 A/µs
55 90
Output Characteristics
0
1
2
3
4
5
0246810
V
GS
= 10 V thru 5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
3 V
4 V
Transfer Characteristics
0
1
2
3
4
5
012345
T
C
= 125 °C
- 55
°C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
Document Number: 72093
S09-0705-Rev. C, 27-Apr-09
www.vishay.com
3
Vishay Siliconix
Si4462DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
R
DS(on)
0.0
0.2
0.4
0.6
0.8
012345
I
D
- Drain Current (A)
V
GS
= 6 V
V
GS
= 10 V
- On-Resistance (Ω)
0
2
4
6
8
10
0123456
V
DS
= 100 V
I
D
= 1.5 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
5
0.1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
100
200
300
400
0 20406080
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
0.5
0.9
1.3
1.7
2.1
2.5
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 1.5 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
0.0
0.2
0.4
0.6
0.8
0246810
I
D
= 1.5 A
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
- On-Resistance (Ω)
P1-P3P4-P6

SI4462DY-T1-GE3

Mfr. #:
Buy SI4462DY-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET N-CH 200V 1.15A 8-SOIC
Lifecycle:
New from this manufacturer.
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