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DMP26M7UFG-7

P1-P3P4-P6
POWERDI is a registered trademark of Diodes Incorporated
DMP26M7UFG
Document number: DS37944 Rev. 1 - 2
1 of 6
www.diodes.com
April 2015
© Diodes Incorporated
DMP26M7UFG
ADVANCE INFO R MA T I O N
ADVANCE INFO R MA T I O N
NEW PRODUCT
20V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
®
Product Summary
V
(BR)DSS
R
DS(ON)
Max
-20V
6.7mΩ @ V
GS
= -4.5V
9.0mΩ @ V
GS
= -2.5V
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Load Switch
Power Management Functions
Features
Low R
DS(ON)
– ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
ESD HBM Protected up to 1KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: POWERDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMP26M7UFG-7
POWERDI3333-8
2000/Tape & Reel
DMP26M7UFG-13
POWERDI3333-8
3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Bottom View
Equivalent Circuit
S
S
S
G
D
D
D
D
Pin 1
Top View
S42 or S47= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 14 = 2014)
WW = Week Code (01 to 53)
POWERDI3333-8
S42
YYWW
D
S
G
S47
YYWW
POWERDI is a registered trademark of Diodes Incorporated
DMP26M7UFG
Document number: DS37944 Rev. 1 - 2
2 of 6
www.diodes.com
April 2015
© Diodes Incorporated
DMP26M7UFG
ADVANCE INFO R MA T I O N
ADVANCE INFO R MA T I O N
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-20
V
Gate-Source Voltage
V
GSS
±10
V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
I
D
-18.0
-14.5
-40
A
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
I
DM
-80
A
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
-2.2
A
Avalanche Current (Note 7) L=0.1mH
I
AS
-23
A
Avalanche Energy (Note 7) L=0.1mH
E
AS
28
mJ
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
2.3
W
T
C
= +25°C
41
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
56
°C/W
(Note 6)
124
Thermal Resistance, Junction to Case
R
θJC
6.8
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-20
—
—
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
—
—
-1
µA
V
DS
= -16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
—
—
±100
nA
V
GS
= 8V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(TH)
-0.4
—
-1.0
V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS(ON)
—
4.2
6.7
mΩ
V
GS
= -4.5V, I
D
= -15A
—
5.4
9.0
V
GS
= -2.5V, I
D
= -10A
—
7
—
V
GS
= -1.8V, I
D
= -1A
Diode Forward Voltage
V
SD
—
-0.7
-1.2
V
V
GS
= 0V, I
S
= -10A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
—
5940
—
pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
—
835
—
Reverse Transfer Capacitance
C
rss
—
728
—
Gate Resistance
R
G
—
3.0
—
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V)
Q
g
—
75
—
nC
V
DD
= -10V, I
D
= -20A
Total Gate Charge (V
GS
= -10V)
Q
g
—
156
—
Gate-Source Charge
Q
gs
—
8.8
—
Gate-Drain Charge
Q
gd
—
22
—
Turn-On Delay Time
t
D(ON)
—
10.7
—
ns
V
GS
= -4.5V, V
DD
= -10V,
R
G
= 1Ω, I
D
= -10A
Turn-On Rise Time
t
R
—
23
—
Turn-Off Delay Time
t
D(OFF)
—
121
—
Turn-Off Fall Time
t
F
—
109
—
Reverse Recovery Time
t
RR
—
60
—
ns
I
F
= -10A, di/dt = 100A/µs
Reverse Recovery Charge
Q
RR
—
47
—
nC
I
F
= -10A, di/dt = 100A/µs
Notes: 5. R
θJA
is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R
θJC
is guaranteed by design
while R
θJA
is determined by the user’s board design.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7 .UIS in production with L =0.1mH, T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
DMP26M7UFG
Document number: DS37944 Rev. 1 - 2
3 of 6
www.diodes.com
April 2015
© Diodes Incorporated
DMP26M7UFG
ADVANCE INFO R MA T I O N
ADVANCE INFO R MA T I O N
NEW PRODUCT
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
=-1.2V
V
GS
=-1.5V
V
GS
=-1.8V
V
GS
=-2.0V
V
GS
=-2.5V
V
GS
=-10V
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3
I
D
, DRAIN CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS
=-5.0V
T
A
=-55℃
T
A
=25℃
T
A
=85℃
T
A
=150℃
T
A
=125℃
0
0.005
0.01
0.015
0.02
0.025
0.03
1 2 3 4 5 6 7 8 9 10
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Ω)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D
=-15A
I
D
=-10A
0
0.002
0.004
0.006
0.008
0.01
0.012
1 6 11 16 21 26 31
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Ω)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=-1.8V
V
GS
=-2.5V
V
GS
=-4.5V
0
0.5
1
1.5
2
-50 -25 0 25 50 75 100 125 150
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
V
GS
=-4.5V, I
D
=-15.0A
V
GS
=-2.5V, I
D
=-10.0A
0
0.002
0.004
0.006
0.008
0.01
0 5 10 15 20 25 30
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
V
GS
=-4.5V
T
A
=-55℃
T
A
=25℃
T
A
=85℃
T
A
=150℃
T
A
=125℃
P1-P3P4-P6

DMP26M7UFG-7

Mfr. #:
Buy DMP26M7UFG-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 20V P-Ch Enh FET 12Vgss PPAP
Lifecycle:
New from this manufacturer.
Delivery:
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