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MBRS230LT3G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2015
June, 2017 − Rev. 5
1 Publication Order Number:
MBRS230LT3/D
MBRS230L, NRVBS230L
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
This device employs the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guardring for Over−Voltage Protection
• Low Forward Voltage Drop
• NRVBS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics
• Case: Molded Epoxy
• Epoxy Meets UL 94, V−0 @ 0.125 in.
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Maximum Temperature of 260°C/10 Seconds for Soldering
• Available in 12 mm Tape, 2500 Units per 13″ Reel,
Add “T3” Suffix to Part Number
• Cathode Polarity Band
www.onsemi.com
SMB
CASE 403A
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES
30 VOLTS
MARKING DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
MBRS230LT3G SMB
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ALYW
2BL3G
G
A = Assembly Location**
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
NRVBS230LT3G* SMB
(Pb−Free)
2500 / Tape & Reel
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
MBRS230L, NRVBS230L
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30 V
Average Rectified Forward Current
(At Rated V
R
, T
C
= 110°C)
I
O
2.0 A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 20 kHz, T
C
= 105°C)
I
FRM
4.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
I
FSM
40 A
Storage/Operating Case Temperature T
stg
, T
C
−55 to +175 °C
Operating Junction Temperature T
J
−55 to +125 °C
Voltage Rate of Change
(Rated V
R
, T
J
= 25°C)
dv/dt 10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance,
Junction−to−Lead (Note 1)
Thermal Resistance,
Junction−to−Ambient (Note 1)
R
q
JL
R
q
JA
18.6
135
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
(I
F
= 2.0 A)
see Figure 2 (I
F
= 4.0 A)
V
F
T
J
= 25°C T
J
= 125°C
V
0.50
0.60
0.45
0.63
Maximum Instantaneous Reverse Current (Note 2)
(V
R
= 30 V)
see Figure 4 (V
R
= 15 V)
I
R
T
J
= 25°C T
J
= 125°C
mA
1
0.31
75
35
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Minimum pad size (0.108″ X 0.085″) for each lead on FR4 board.
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
0.60
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1
0.01
0.1 0.4
V
F
, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
0.50.30.2
0.60
10
1
0.1
0.2 0.4 0.50.1 0.3 0.7
0.8
0.1
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
T
J
= 125°C
100°C
25°C −55°C
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
T
J
= 125°C
100°C
25°C
MBRS230L, NRVBS230L
www.onsemi.com
3
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
300
V
R
, REVERSE VOLTAGE (VOLTS)
100E−3
10E−3
10 15 20 300
V
R
, REVERSE VOLTAGE (VOLTS)
100E−3
10E−3
1E−3
100E−6
10E−6
10 20 25
I
R
, REVERSE CURRENT (AMPS)
255
1E−3
100E−6
1E−6
10E−6
T
J
= 125°C
T
J
= 100°C
T
J
= 25°C
T
J
= 125°C
T
J
= 100°C
T
J
= 25°C
515
I
R
, MAXIMUM REVERSE CURRENT (AMPS)
Figure 5. Current Derating Per Leg Figure 6. Forward Power Dissipation Per Leg
40 8020
T
C
, CASE TEMPERATURE (°C)
2.0
1.0
0
I
O
, AVERAGE FORWARD CURRENT (AMPS)
0.5 2.00
1.8
1.2
1.0
0.4
0
60 140120 1.0 1.5
0.6
3.0
FREQ = 20 kHz
3.5
1.5
0.5
2.5
3.52.5 3.0
0.2
0.8
1.4
dc
1000
I
O
, AVERAGE FORWARD CURRENT (AMPS)
SQUARE WAVE
Ipk/Io = p
Ipk/Io = 5.0
Ipk/Io = 10
Ipk/Io = 20
1.6
P
FO
, AVERAGE POWER DISSIPATION (WATTS)
T
J
= 125°C
dc
SQUARE
WAVE
Ipk/Io = p
Ipk/Io = 5.0
Ipk/Io = 10
Ipk/Io = 20
Figure 7. Thermal Response
0.1
t, TIME (s)
1
0.1
0.01
0.001
0.0001
0.0001 0.001 0.01
1.0
10 100 1000
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
R
q
J
Lead = 18.6
R
q
J
Ambient = 150
P1-P3P4-P4

MBRS230LT3G

Mfr. #:
Buy MBRS230LT3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 2A 30V Low Vf
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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