IXTQ100N25P Datasheet IXTT100N25P, IXTQ100N25P, IXTK100N25P | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25° C to 150° C 250 V

V

DGR

T

J

= 25° C to 150° C; R

GS

= 1 MΩ 250 V

V

GSS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

T

C

= 25° C 100 A

I

D(RMS)

External lead current limit 75 A

I

DM

T

C

= 25° C, pulse width limited by T

JM

250 A

I

AR

T

C

= 25° C60A

E

AR

T

C

= 25° C60mJ

E

AS

T

C

= 25° C 2.0 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/µs, V

DD

≤ V

DSS

, 10 V/ns

T

J

≤ 150° C, R

G

= 4 Ω

P

D

T

C

= 25° C 600 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

T

SOLD

Plastic body for 10 s 260 °C

M

d

Mounting torque 1.13/10 Nm/lb.in.

Weight TO-3P 5.5 g

TO-264 10 g

TO-268 5.0 g

G = Gate D = Drain

S = Source TAB = Drain

DS99118E(12/05)

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0 V, I

D

= 250 µA 250 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250µA 2.5 5.0 V

I

GSS

V

GS

= ±20 V

DC

, V

DS

= 0 ±100 nA

I

DSS

V

DS

= V

DSS

25 µA

V

GS

= 0 V T

J

= 125° C 250 µA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

27 m Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

PolarHT

TM

Power MOSFET

IXTK 100N25P V

DSS

= 250 V

IXTQ 100N25P I

D25

= 100 A

IXTT 100N25P R

DS(on)

≤ ≤

≤ 27 m

ΩΩ

Ω

N-Channel Enhancement Mode

Avalanche Rated

Features

l

International standard packages

l

Unclamped Inductive Switching (UIS)

rated

l

Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

TO-264 (IXTK)

G

D

S

D (TAB)

G

D

S

(TAB)

TO-3P (IXTQ)

TO-268 (IXTT)

G

S

D (TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTK 100N25P IXTQ 100N25P

IXTT 100N25P

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 10 V; I

D

= 0.5 I

D25

, pulse test 40 56 S

C

iss

6300 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 1150 pF

C

rss

240 pF

t

d(on)

25 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= I

D25

26 ns

t

d(off)

R

G

= 3.3 Ω (External) 100 ns

t

f

28 ns

Q

g(on)

185 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

43 nC

Q

gd

91 nC

R

thJC

0.21° C/W

R

thCS

TO-3P 0.21 ° C/W

R

thCS

TO-264 0.15 ° C/W

Source-Drain Diode Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 100 A

I

SM

Repetitive 250 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

F

= 25 A, -di/dt = 100 A/µs 200 ns

Q

RM

V

R

= 100 V, V

GS

= 0 V 3.0 µC

TO-3P (IXTQ) Outline

TO-264 (IXTK) Outline

TO-268 (IXTT) Outline

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

IXTK 100N25P IXTQ 100N25P

IXTT 100N25P

Fig. 2. Extended Output Characteristics

@ 25

º

C

0

25

50

75

100

125

150

175

200

225

250

0 2 4 6 8 101214161820

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

8V

9V

Fig. 3. Output Characteristics

@ 125

º

C

0

10

20

30

40

50

60

70

80

90

100

01234567

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

5V

6V

7V

Fig. 1. Output Characteristics

@ 25

º

C

0

10

20

30

40

50

60

70

80

90

100

00.511.522.533.5

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

7V

6V

5V

Fig. 4. R

DS(on

)

Norm alize d to 0.5 I

D25

Value vs. Junction Tem perature

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

I

D

= 100A

I

D

= 50A

V

GS

= 10V

Fig. 6. Drain Current vs. Case

Tem perature

0

10

20

30

40

50

60

70

80

90

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

Fig. 5. R

DS(on)

Norm alize d to

0.5 I

D25

Value vs . I

D

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

3.1

3.4

0 25 50 75 100 125 150 175 200 225 250

I

D

- Amperes

R

DS(on)

- Normalized

T

J

= 125ºC

T

J

= 25ºC

V

GS

= 10V

IXTQ100N25P

IXTQ100N25P

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