HCF4011BEY

1/7September 2001
PROPAGATION DELAY TIME
t
PD
= 60ns (Typ.) at V
DD
= 10V
BUFFERED INPUTS AND OUTPUTS
STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
QUIESCENT CURRENT SPECIFIED UP TO
20V
5V, 10V AND 15V PARAMETRIC RATINGS
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25°C
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
The HCF4011B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4011B QUAD 2 INPUT NAND GATE
provides the system designer with direct
implementation of the NAND function and
supplement the existing family of CMOS gates. All
inputs and outputs are buffered.
HCF4011B
QUAD 2 INPUT NAND GATE
PIN CONNECTION
ORDER CODES
PACKAGE TUBE T & R
DIP HCF4011BEY
SOP HCF4011BM1 HCF4011M013TR
DIP SOP
HCF4011B
2/7
INPUT EQUIVALENT CIRCUIT
LOGIC DIAGRAM
PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
PIN No SYMBOL NAME AND FUNCTION
1, 2, 5, 6, 8,
9, 12, 13
A, B, C, D, E,
F, G, H
Data Inputs
3, 4, 10, 11 J, K, L, M Data Outputs
7
V
SS
Negative Supply Voltage
14
V
DD
Positive Supply Voltage
INPUTS OUTPUTS
A, C, E, G B, D, F, H J, K, L, M
LLH
LHH
HLH
HHL
Symbol Parameter Value Unit
V
DD
Supply Voltage
-0.5 to +22 V
V
I
DC Input Voltage -0.5 to V
DD
+ 0.5
V
I
I
DC Input Current
± 10 mA
P
D
Power Dissipation per Package 200 mW
Power Dissipation per Output Transistor 100 mW
T
op
Operating Temperature
-55 to +125 °C
T
stg
Storage Temperature
-65 to +150 °C
Symbol Parameter Value Unit
V
DD
Supply Voltage
3 to 20 V
V
I
Input Voltage 0 to V
DD
V
T
op
Operating Temperature
-55 to 125 °C
HCF4011B
3/7
DC SPECIFICATIONS
The Noise Margin for both "1" and "0" level is: 1V min. with V
DD
=5V, 2V min. with V
DD
=10V, 2.5V min. with V
DD
=15V
DYNAMIC ELECTRICAL CHARACTERISTICS (T
amb
= 25°C, C
L
= 50pF, R
L
= 200K, t
r
= t
f
= 20 ns)
(*) Typical temperature coefficient for all V
DD
value is 0.3 %/°C.
Symbol Parameter
Test Condition Value
Unit
V
I
(V)
V
O
(V)
|I
O
|
(µA)
V
DD
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
I
L
Quiescent Current 0/5 5 0.01 0.25 7.5 7.5
µA
0/10 10 0.01 0.5 15 15
0/15 15 0.01 1 30 30
0/20 20 0.02 5 150 150
V
OH
High Level Output
Voltage
0/5 <1 5 4.95 4.95 4.95
V0/10 <1 10 9.95 9.95 9.95
0/15 <1 15 14.95 14.95 14.95
V
OL
Low Level Output
Voltage
5/0 <1 5 0.05 0.05 0.05
V10/0 <1 10 0.05 0.05 0.05
15/0 <1 15 0.05 0.05 0.05
V
IH
High Level Input
Voltage
0.5/4.5 <1 5 3.5 3.5 3.5
V1/9 <1 10 7 7 7
1.5/13.5 <1 15 11 11 11
V
IL
Low Level Input
Voltage
4.5/0.5 <1 5 1.5 1.5 1.5
V9/1 <1 10 3 3 3
13.5/1.5 <1 15 4 4 4
I
OH
Output Drive
Current
0/5 2.5 <1 5 -1.36 -3.2 -1.15 -1.1
mA
0/5 4.6 <1 5 -0.44 -1 -0.36 -0.36
0/10 9.5 <1 10 -1.1 -2.6 -0.9 -0.9
0/15 13.5 <1 15 -3.0 -6.8 -2.4 -2.4
I
OL
Output Sink
Current
0/5 0.4 <1 5 0.44 1 0.36 0.36
mA0/10 0.5 <1 10 1.1 2.6 0.9 0.9
0/15 1.5 <1 15 3.0 6.8 2.4 2.4
I
I
Input Leakage
Current
0/18 Any Input 18
±10
-5
±0.1 ±1 ±1 µA
C
I
Input Capacitance
Any Input 5 7.5 pF
Symbol Parameter
Test Condition Value (*) Unit
V
DD
(V)
Min. Typ. Max.
t
PLH
t
PHL
Propagation Delay Time 5 125 250
ns10 60 120
15 45 90
t
TLH
t
THL
Output Transition Time 5 100 200
ns10 50 100
15 40 80

HCF4011BEY

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Logic Gates Quad 2-Input NAND
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet