AP2401/AP2411
Document number: DS35113 Rev. 6 - 2
4 of 18
www.diodes.com
March 2013
© Diodes Incorporated
AP2401/AP2411
Electrical Characteristics (@T
A
= +25°C, V
IN
= +5.0V, C
IN
= 0.1µF, C
L
= 1µF, unless otherwise specified.)
Symbol Parameter Test Conditions (Note 5) Min Typ Max Unit
V
UVLO
Input UVLO V
IN
rising 1.6 2.0 2.4 V
V
UVLO
Input UVLO Hysteresis V
IN
decreasing 50 mV
I
SHDN
Input Shutdown Current Disabled, OUT = open 0.1 1 µA
I
Q
Input Quiescent Current Enabled, OUT = open 60 100 µA
I
LEAK
Input Leakage Current Disabled, OUT grounded 0.1 1 µA
I
REV
Reverse Leakage Current Disabled, V
IN
= 0V, V
OUT
= 5V, I
REV
at V
IN
0.01 1 µA
R
DS(ON)
Switch on-resistance
V
IN
= 5V, I
OUT
= 2.0A
T
A
= +25°C 70 84
m
-40°C T
A
+85°C 105
V
IN
= 3.3V, I
OUT
= 2.0A
T
A
= +25°C 90 108
-40°C T
A
+85°C 135
I
LIMIT
Over-Load Current Limit
(Note 6)
V
IN
= 5V, V
OUT
= 4.5V -40°C T
A
+85°C 2.05 2.5 2.85 A
I
Trig
Current limiting trigger threshold Output Current Slew rate (< 100A/s) 2.5 A
I
SHORT
Short-Circuit Current Limit Enabled into short circuit 2.1 2.75 3.3 A
T
SHORT
Short-circuit Response Time V
OUT
= 0V to I
OUT
= I
LIMIT
(OUT shorted to ground) 2 µs
V
IL
EN Input Logic Low Voltage V
IN
= 2.7V to 5.5V 0.8 V
V
IH
EN Input Logic High Voltage V
IN
= 2.7V to 5.5V 2 V
I
LEAK-EN
EN Input leakage V
IN
= 5V, V
EN
= 0V and 5.5V 0.01 1 µA
I
LEAK-O
Output leakage current Disabled, V
OUT
= 0V 0.5 1 µA
T
D(ON)
Output turn-on delay time C
L
= 1µF, R
LOAD
= 5 0.1 ms
T
R
Output turn-on rise time C
L
= 1µF, R
LOAD
= 5 0.6 1.5 ms
T
D(OFF)
Output turn-off delay time C
L
= 1µF, R
LOAD
= 5 0.1 ms
T
F
Output turn-off fall time C
L
= 1µF, R
LOAD
= 5 0.05 0.1 ms
R
FLG
FLG output FET on-resistance I
FLG
= 10mA 20 40
I
FOH
FLG Off Current V
FLG
= 5V 0.01 1 µA
T
BLANK
FLG blanking and latch off time
Assertion or deassertion due to overcurrent and over-
temperature condition
4 7 15 ms
T
DIS
Discharge time C
L
= 1µF, V
IN
= 5V, disabled to V
OUT
< 0.5V 0.6 ms
R
DIS
Discharge resistance (Note 7) V
IN
= 5V, disabled, I
OUT
= 1mA 100
T
SHDN
Thermal Shutdown Threshold Enabled 140 °C
T
HYS
Thermal Shutdown Hysteresis 20 °C
JA
Thermal Resistance Junction-to-
Ambient
SO-8 (Note 8) 96 °C/W
MSOP-8 (Note 8) 130 °C/W
MSOP-8EP (Note 9) 92 °C/W
U-DFN3030-8 (Note 9) 84 °C/W
U-DFN2020-6 (Note 10) 90 °C/W
Notes: 6. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
7. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up power-down when V
IN
< V
UVLO
.
The discharge function offers a resistive discharge path for the external storage capacitor for limited time.
8. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
9. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground
plane.
10. Device mounted on 1"x1" FR-4 substrate PCB, 2oz copper, with minimum recommended padon top layer and thermal vias to bottom layer ground.
