MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/Switch
2
Maxim Integrated
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
V
CC
........................................................................-0.3V to +5.5V
LO1, LO2 to GND ...............................................................±0.3V
IFM_, IFD_, IFM_SET, IFD_SET, LOSEL,
LO_ADJ_M, LO_ADJ_D to GND.............-0.3V to (V
CC
+ 0.3V)
RFMAIN, RFDIV, and LO_ Input Power ..........................+20dBm
RFMAIN, RFDIV Current
(RF is DC shorted to GND through balun) ......................50mA
Continuous Power Dissipation (Note 1) .............................6.75W
Operating Temperature Range (Note 2)...T
C
= -40°C to +100°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
DC ELECTRICAL CHARACTERISTICS
(
Typical Application Circuit
, no input RF or LO signals applied, V
CC
= 4.75V to 5.25V, T
C
= -40°C to +85°C. Typical values are at V
CC
= 5.0V, T
C
= +25°C, unless otherwise noted.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage V
CC
4.75 5 5.25 V
Total supply current 332 380
V
CC
(pin 16) 82 90
V
CC
(pin 30) 97 110
IFM+/IFM- (total of both) 70 90
Supply Current I
CC
IFD+/IFD- (total of both) 70 90
mA
LOSEL Input High Voltage V
IH
2V
LOSEL Input Low Voltage V
IL
0.8 V
LOSEL Input Current I
IL
and I
IH
-10 +10 µA
Note 1: Based on junction temperature T
J
= T
C
+ (θ
JC
x V
CC
x I
CC
). This formula can be used when the temperature of the exposed
pad is known while the device is soldered down to a PCB. See the
Applications Information
section for details. The junction
temperature must not exceed +150°C.
Note 2: T
C
is the temperature on the exposed pad of the package. T
A
is the ambient temperature of the device and PCB.
TQFN
Junction-to-Ambient Thermal Resistance (θ
JA
)
(Note 3, 4) ....................................................................38°C/W
Junction-to-Board Thermal Resistance (θ
JB
)................12.2°C/W
Junction-to-Case Thermal Resistance (θ
JC
)
(Note 1, 4) ...................................................................7.4°C/W
PACKAGE THERMAL CHARACTERISTICS
Note 3: Junction temperature T
J
= T
A
+ (θ
J
A
x V
CC
x I
CC
). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Note 4: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial
.
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
RF Frequency Range f
RF
(Note 5) 1700 2700 MHz
LO Frequency Range f
LO
(Note 5) 1400 2600 MHz
IF Frequency Range f
IF
(Note 5) 40 350 MHz
LO Drive Level P
LO
(Note 5) -3 +3 dBm
