2SC5232
2014-03-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC5232
General Purpose Amplifier Applications
Switching and Muting Switch Application
• Low saturation voltage: V
CE (sat)
(1) = 15 mV (typ.)
@I
C
= 10 mA/I
B
= 0.5 mA
• Large collector current: I
C
= 500 mA (max)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
15 V
Collector-emitter voltage V
CEO
12 V
Emitter-base voltage V
EBO
5 V
Collector current I
C
500 mA
Base current I
B
50 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 2-3F1A
Weight: 12 mg (typ.)
Start of commercial production
1994-03
