JANTXV2N5680

Ratings Symbol 2N5679 2N5680 Units
Collector - Emitter Voltage V
CEO
100 120 Vdc
Collector - Base Voltage V
CBO
100 120 Vdc
Emitter - Base Voltage V
EBO
4.0 4.0 Vdc
Collector Current I
C
1.0 1.0 Adc
Base Current I
B
0.5 0.5 Adc
Total Power Dissipation @ T
A
= +25 °C P
T
1.0 1.0 W
@ T
C
= +100 °C
10.0 10.0 W
Operating & Storage Temperature Range T
op
, T
stg
-65 to +200 °C
Revision Date: 2/7/2014
1
PNP Power Silicon Transistor
2N5679 & 2N5680
Maximum Ratings (T
A
= 25°C unless otherwise noted)
Features
Available in JAN, JANTX and JANTXV
per MIL-PRF-19500/582
TO-39 (TO-205AD) Package
Electrical Characteristics (T
A
= 25°C unless otherwise noted)
OFF Characteristics Symbol Mimimum Maximum Units
Collector - Emitter Breakdown Voltage
I
C
= 100 mAdc 2N5679 V
(BR)CEO
60 - - - Vdc
2N5680 80
Collector - Emitter Cutoff Current
V
CE
= 40 Vdc 2N5679 I
CEO
- - - 10 μAdc
V
CE
= 60 Vdc 2N5680 10
Collector - Emitter Cutoff Current
V
CE
= 60 Vdc, V
BE
= 1.5 Vdc 2N5679 I
CEX
- - - 300 nAdc
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc 2N5680 300
Collector - Base Cutoff Current
V
CB
= 60 Vdc 2N5679 I
CBO
- - - 100 nAdc
V
CB
= 80 Vdc 2N5680 100
Emitter - Base Cutoff Current
V
EB
= 7.0 Vdc I
EBO
- - - 100 nAdc
Characteristics Symbol Maximum Unit
Thermal Resistance, Junction-to-Case R
θJC
7.0 °C/W
Thermal Characteristics
1) Derate linearly 5.7 mW/°C for T
A
> +25 °C
2) Derate linearly 57 mW/°C for T
C
> +25 °C
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Revision Date: 2/7/2014
2
Electrical Characteristics -con’t
ON Characteristics
(1)
Symbol Minimum Maximum Unit
Forward Current Transfer Ratio
I
C
= 250 mAdc, V
CE
= 2.0 Vdc 40 150
I
C
= 500 mAdc, V
CE
= 2.0 Vdc H
FE
20
I
C
= 1.0 Adc, V
CE
= 2.0 Vdc 5
Collector - Emitter Saturation Voltage
I
C
= 250 mAdc, I
B
= 25 mAdc V
CE(sat)
- - - 0.6 Vdc
I
C
= 500 mAdc, I
B
= 50 mAdc - - - 1.0
Base - Emitter Voltage
I
C
= 250 mAdc, I
B
= 25 mAdc V
BE(on)
- - - 1.1 Vdc
I
C
= 500 mAdc, I
B
= 50 mAdc - - - 1.3
DYNAMIC Characteristics
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 0.1 Adc, V
CE
= 1.5 Vdc, f = 10 MHz | h
fe
| 3.0
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 0.2 Adc, V
CE
= 1.5 Vdc, f = 1.0 kHz h
fe
40
Output Capacitance
V
CB
= 20 Vdc, I
E
= 0, f = 1.0 MHz C
obo
- - - 50 pF
SAFE OPERATING AREA
DC Tests: T
C
= +25 °C, 1 Cycle, t 0.5 s
Test 1: V
CE
= 2.0 Vdc, I
C
= 1.0 Adc
Test 2: V
CE
= 10 Vdc, I
C
= 1.0 Adc
Test 3: V
CE
= 90 Vdc, I
C
= 10 mAdc
2N5679 & 2N5680
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Revision Date: 2/7/2014
Aeroflex / Metelics, Inc.
975 Stewart Drive, 54 Grenier Field Road,
Sunnyvale, CA 94085 Londonderry, NH 03053
Tel: (408) 737-8181 Tel: (603) 641-3800
Fax: (408) 733-7645 Fax: (603)-641-3500
Sales: 888-641-SEMI (7364)
Hi-Rel Components
9 Hampshire Street,
Lawrence, MA 01840
Tel: (603) 641-3800
Fax: (978) 683-3264
www.aeroflex.com/metelicsHRC
Aeroflex / Metelics, Inc. reserves the right to make changes to any products and services
herein at any time without notice. Consult Aeroflex or an authorized sales representative to
verify that the information in this data sheet is current before using this product. Aeroflex
does not assume any responsibility or liability arising out of the application or use of any
product or service described herein, except as expressly agreed to in writing by Aeroflex;
nor does the purchase, lease, or use of a product or service from Aeroflex convey a license
under any patent rights, copyrights, trademark rights, or any other of the intellectual rights
of Aeroflex or of third parties.
Copyright 2013 Aeroflex / Metelics. All rights reserved.
www.aeroflex.com/metelics metelics-sales@aeroflex.com
ISO 9001: 2008 certified companies
2N5679 & 2N5680
Outline Drawing
NOTE: Dimensions in Inches [mm]

JANTXV2N5680

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Bipolar Transistors - BJT Power BJT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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