ZTX451

NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2  MARCH 1994
FEATURES
* 60 Volt V
CEO
* 1 Amp continuous current
*P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX450 ZTX451 UNIT
Collector-Base Voltage V
CBO
60 80 V
Collector-Emitter Voltage V
CEO
45 60 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
2A
Continuous Collector Current I
C
1A
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL ZTX450 ZTX451 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
60 80 V
I
C
=100µA
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
45 60 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
55V
I
E
=100µA
Collector Cut-Off
Current
I
CBO
0.1
0.1
µA
µA
V
CB
=45V
V
CB
=60V
Emitter Cut-Off
Current
I
EBO
0.1 0.1
µA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.25 0.35 V I
C
=150mA, I
B
=15mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.1 1.1 V I
C
=150mA, I
B
=15mA*
Static Forward
Current Transfer
Ratio
h
FE
100
15
300 50
10
150 I
C
=150mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
Transition
Frequency
f
T
150 150 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
15 15 pF V
CB
=10V, f=1MHz
E-Line
TO92 Compatible
ZTX450
ZTX451
3-175
C
B
E
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
IC - Collector Current (Amps)
V
C
E
(sat)
- (V
olts)
IC - Collector Current (Amps) IC - Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
IC - Collector Current (Amps)
V
BE(on)
v I
C
h
F
E
- Norma
l
ised
Ga
i
n
(
%
)
V
BE
(
sa
t
)
- (V
olts)
V
B
E
-
(
V
olts)
I
C
-
Co
l
le
c
to
r
Cur
r
e
nt
(
Am
ps)
VCE - Collector Voltage (Volts)
Safe Operating Area
0.1 100110
0.01
0.1
1
10
Single Pulse Test at T
amb
=25°C
0.001
0.01
100.1 1
20
40
60
80
100
0.001
0.1
1
0.3
0.4
0.5
0.6
0.7
0.9
1.0
0
0.001
0.01
1
0.1
0.1
0.2
0.3
0.4
I
C
/I
B
=10
I
C
/I
B
=10
Typical Switching Speeds
IC - Collector Current (Amps)
Swi
t
c
h
i
n
g t
i
m
e
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
td,tr,tf
ns
100
60
40
20
80
0
600
400
200
ts
nS
100
0.01
0.6
0.8
1.0
1.2
0.8
ZTX450
ZT
X
45
1
V
CE
=-10V
300
500
800
700
120
140
1.4
0.001
0.01
100.1 1
D.C.
1s
100ms
10ms
1.0ms
300µs
100µs
ZTX450
ZT
X
4
5
1
ZTX450
ZTX451
3-176
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2  MARCH 1994
FEATURES
* 60 Volt V
CEO
* 1 Amp continuous current
*P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX450 ZTX451 UNIT
Collector-Base Voltage V
CBO
60 80 V
Collector-Emitter Voltage V
CEO
45 60 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
2A
Continuous Collector Current I
C
1A
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL ZTX450 ZTX451 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
60 80 V
I
C
=100µA
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
45 60 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
55V
I
E
=100µA
Collector Cut-Off
Current
I
CBO
0.1
0.1
µA
µA
V
CB
=45V
V
CB
=60V
Emitter Cut-Off
Current
I
EBO
0.1 0.1
µA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.25 0.35 V I
C
=150mA, I
B
=15mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.1 1.1 V I
C
=150mA, I
B
=15mA*
Static Forward
Current Transfer
Ratio
h
FE
100
15
300 50
10
150 I
C
=150mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
Transition
Frequency
f
T
150 150 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
15 15 pF V
CB
=10V, f=1MHz
E-Line
TO92 Compatible
ZTX450
ZTX451
3-175
C
B
E
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
IC - Collector Current (Amps)
V
C
E
(sat)
- (V
olts)
IC - Collector Current (Amps) IC - Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
IC - Collector Current (Amps)
V
BE(on)
v I
C
h
F
E
- Norma
l
ised
Ga
i
n
(
%
)
V
BE
(
sa
t
)
- (V
olts)
V
B
E
-
(
V
olts)
I
C
-
Co
l
le
c
to
r
Cur
r
e
nt
(
Am
ps)
VCE - Collector Voltage (Volts)
Safe Operating Area
0.1 100110
0.01
0.1
1
10
Single Pulse Test at T
amb
=25°C
0.001
0.01
100.1 1
20
40
60
80
100
0.001
0.1
1
0.3
0.4
0.5
0.6
0.7
0.9
1.0
0
0.001
0.01
1
0.1
0.1
0.2
0.3
0.4
I
C
/I
B
=10
I
C
/I
B
=10
Typical Switching Speeds
IC - Collector Current (Amps)
Swi
t
c
h
i
n
g t
i
m
e
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
td,tr,tf
ns
100
60
40
20
80
0
600
400
200
ts
nS
100
0.01
0.6
0.8
1.0
1.2
0.8
ZTX450
ZT
X
45
1
V
CE
=-10V
300
500
800
700
120
140
1.4
0.001
0.01
100.1 1
D.C.
1s
100ms
10ms
1.0ms
300µs
100µs
ZTX450
ZT
X
4
5
1
ZTX450
ZTX451
3-176

ZTX451

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN Medium Power
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union