SIHW47N60E-GE3 Datasheet SIHW47N60E-GE3 | P1-P3

SiHW47N60E

www.vishay.com

Vishay Siliconix

S13-2347-Rev. D, 18-Nov-13

1

Document Number: 91517

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

E Series Power MOSFET

FEATURES

• Low Figure-of-Merit (FOM) R

on

x Q

g

• Low Input Capacitance (C

iss

)

• Reduced Switching and Conduction Losses

• Ultra Low Gate Charge (Q

g

)

•Avalanche Energy Rated (UIS)

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Switch Mode Power Supplies (SMPS)

• Power Factor Correction Power Supplies (PFC)

• Lighting

- High-Intensity Discharge (HID)

- Fluorescent Ballast Lighting

• Industrial

- Welding

- Induction Heating

- Motor Drives

- Battery Chargers

- Renewable Energy

- Solar (PV Inverters)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V

DD

= 50 V, starting T

J

= 25 °C, L = 73.5 mH, R

g

= 25 , I

AS

= 7 A.

c. 1.6 mm from case.

d. I

SD

 I

D

, dI/dt = 100 A/μs, starting T

J

= 25 °C.

PRODUCT SUMMARY

V

DS

(V) at T

J

max. 650

R

DS(on)

max. at 25 °C ()V

GS

= 10 V 0.064

Q

g

max. (nC) 220

Q

gs

(nC) 36

Q

gd

(nC) 60

Configuration Single

N-Channel MOSFET

G

D

S

TO-247AD

G

D

S

D

S

ORDERING INFORMATION

Package TO-247AD

Lead (Pb)-free and Halogen-free SiHW47N60E-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage

V

DS

600

V

Gate-Source Voltage

V

GS

± 20

Gate-Source Voltage AC (f > 1 Hz) 30

Continuous Drain Current (T

J

= 150 °C) V

GS

at 10 V

T

C

= 25 °C

I

D

47

AT

C

= 100 °C 30

Pulsed Drain Current

a

I

DM

145

Linear Derating Factor 3W/°C

Single Pulse Avalanche Energy

b

E

AS

1800 mJ

Maximum Power Dissipation P

D

357 W

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +150 °C

Drain-Source Voltage Slope T

J

= 125 °C

dV/dt

37

V/ns

Reverse Diode dV/dt

d

11

Soldering Recommendations (Peak Temperature)

c

for 10 s 300 °C

SiHW47N60E

www.vishay.com

Vishay Siliconix

S13-2347-Rev. D, 18-Nov-13

2

Document Number: 91517

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

-40

°C/W

Maximum Junction-to-Case (Drain)

R

thJC

-0.33

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 600 - - V

V

DS

Temperature Coefficient V

DS

/T

J

Reference to 25 °C, I

D

= 250 μA - 0.66 - V/°C

Gate-Source Threshold Voltage (N) V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 2.5 - 3.5 V

Gate-Source Leakage I

GSS

V

GS

= ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 600 V, V

GS

= 0 V - - 1

μA

V

DS

= 480 V, V

GS

= 0 V, T

J

= 150 °C - - 10

Drain-Source On-State Resistance R

DS(on)

V

GS

= 10 V I

D

= 24 A - 0.053 0.064 

Forward Transconductance g

fs

V

DS

= 8 V, I

D

= 3 A - 6.8 - S

Dynamic

Input Capacitance C

iss

V

GS

= 0 V,

V

DS

= 100 V,

f = 1 MHz

- 4810 -

pF Output Capacitance C

oss

- 230 -

Reverse Transfer Capacitance C

rss

-5-

Total Gate Charge Q

g

V

GS

= 10 V I

D

= 24 A, V

DS

= 480 V

- 147 220

nC Gate-Source Charge Q

gs

-36-

Gate-Drain Charge Q

gd

-60-

Turn-On Delay Time t

d(on)

V

DD

= 480 V, I

D

= 24 A,

V

GS

= 10 V, R

g

= 4.4 

-2450

ns

Rise Time t

r

-1125

Turn-Off Delay Time t

d(off)

-94140

Fall Time t

f

-1326

Gate Input Resistance R

g

f = 1 MHz, open drain - 0.65 - 

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

MOSFET symbol

showing the 

integral reverse

p - n junction diode

--47

A

Pulsed Diode Forward Current I

SM

--140

Diode Forward Voltage V

SD

T

J

= 25 °C, I

S

= 24 A, V

GS

= 0 V - - 1.2 V

Body Diode Reverse Recovery Time t

rr

T

J

= 25 °C, I

F

= I

S = 24 A

,

dI/dt = 100 A/μs

, V

R

= 25 V

- 696 - ns

Body Diode Reverse Recovery Charge Q

rr

-16-μC

Reverse Recovery Current I

RRM

-39-A

S

D

G

SiHW47N60E

www.vishay.com

Vishay Siliconix

S13-2347-Rev. D, 18-Nov-13

3

Document Number: 91517

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, T

C

= 25 °C

Fig. 2 - Typical Output Characteristics, T

C

= 150 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - C

oss

and E

oss

vs. V

DS

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

0

20

40

60

80

100

120

140

160

180

0 5 10 15 20 25 30

Top 15 V

14 V

13 V

12 V

11 V

10 V

9.0 V

8.0 V

7.0 V

6.0 V

T

J

= 25 °C

5.0 V

Bottom 5.0 V

0 5 10 15 20 25 30

0

20

40

60

80

100

120

Top 15 V

14 V

13 V

12 V

11 V

10 V

9.0 V

8.0 V

7.0 V

6.0 V

Bottom 5.0 V

T

J

= 150 °C

I

D

, Drain-to-Source Current (A)

V

DS

, Drain-to-Source Voltage (V)

0

20

40

60

80

100

120

140

160

180

0 5 10 15 20 25

T = 150 °C

J

T = 25 °C

J

I

D

, Drain-to-Source Current (A)

V

GS

, Gate-to-Source Voltage (V)

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

V =

I =

GS

D

10 V

24 A

R

DS(on)

, Drain-to-Source On-Resistance

(Normalized)

T

J

, Junction Temperature (°C)

1

10

100

1000

10 000

C, Capacitance (pF)

DS

V , Drain-to-Source Voltage (V)

0 100 200 300 400 500 600

V

GS

= 0 V, f = 1 MHz

C

iss

= C

gs

+ C

gd

, C

ds

Shorted

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

100 000

C

iss

C

oss

C

rss

0

5

10

15

20

25

30

35

50

500

5000

0 100 200 300 400 500 600

E

oss

(μJ)

C

oss

(pF)

V

DS

C

oss

E

oss

SIHW47N60E-GE3

SIHW47N60E-GE3

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