STPSC2H12B-TR1 Datasheet STPSC2H12B-TR1, STPSC2H12D | P1-P3

January 2017

DocID030271 Rev 1

1/10

This is information on a product in full production.

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STPSC2H12

1200 V power Schottky silicon carbide diode

Datasheet - production data

Features

 No or negligible reverse recovery

 Switching behavior independent of

temperature

 Robust high voltage periphery

 Operating T

j

from -40 °C to 175 °C

 Low V

F

 ECOPACK

®

2 compliant

Description

The SiC diode, available in TO-220AC and DPAK

HV, is an ultrahigh performance power Schottky

rectifier. It is manufactured using a silicon carbide

substrate. The wide band-gap material allows the

design of a low V

F

Schottky diode structure with a

1200 V rating. Due to the Schottky construction,

no recovery is shown at turn-off and ringing

patterns are negligible. The minimal capacitive

turn-off behavior is independent of temperature.

Especially suited for use in PFC and secondary

side applications, this ST SiC diode will boost the

performance in hard switching conditions. This

rectifier will enhance the performance of the

targeted application. Its high forward surge

capability ensures a good robustness during

transient phases.

Table 1: Device summary

Symbol

Value

I

F(AV)

2 A

V

RRM

1200 V

T

j

(max.)

175 °C

V

F

(typ.)

1.35 V

A

K

A

K

TO-220AC

DPAK HV 2L

A

K

Characteristics

STPSC2H12

2/10

DocID030271 Rev 1

1 Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

V

RRM

Repetitive peak reverse voltage (T

j

= -40 °C to +175 °C)

1200

V

I

F(RMS)

Forward rms current

10

A

I

F(AV)

Average forward current

T

C

= 160 °C, DC current

T

C

= 120 °C, DC current

2

5

A

I

FRM

Repetitive peak forward

current

T

C

= 160 °C, T

j

= 175 °C, δ = 0.1

9

A

I

FSM

Surge non repetitive forward

current

t

p

= 10 ms sinusoidal

T

C

= 25 °C

15

A

T

C

= 150 °C

13

t

p

= 10 µs square

T

C

= 25 °C

105

T

stg

Storage temperature range

-65 to +175

°C

T

j

Operating junction temperature range

-40 to +175

°C

Table 3: Thermal parameters

Symbol

Parameter

Typ.

Max.

Unit

R

th(j-c)

Junction to case

1.9

2.7

°C/W

Table 4: Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

R

(1)

Reverse leakage current

T

j

= 25 °C

V

R

= V

RRM

-

1

12

µA

T

j

= 150 °C

-

6

80

V

F

(2)

Forward voltage drop

T

j

= 25 °C

I

F

= 2 A

-

1.35

1.50

V

T

j

= 150 °C

-

1.75

2.25

Notes:

(1)

Pulse test: t

p

= 10 ms, δ < 2%

(2)

Pulse test: t

p

= 500 µs, δ < 2%

To evaluate the maximum conduction losses, use the following equation:

P = 1.12 x I

F(AV)

+ 0.565 x I

F

2

(RMS)

Table 5: Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Q

Cj

(1)

Total capacitive charge

V

R

= 800 V

-

15.6

-

nC

C

j

Total capacitance

V

R

= 0 V, T

c

= 25 °C, F = 1 MHz

-

190

-

pF

V

R

= 800 V, T

c

= 25 °C, F = 1 MHz

-

13

-

Notes:

(1)

Most accurate value for the capacitive charge: 

































STPSC2H12

Characteristics

DocID030271 Rev 1

3/10

1.1 Characteristics (curves)

Figure 1: Forward voltage drop versus forward

current (typical values)

Figure 2: Reverse leakage current versus reverse

voltage applied (typical values)

Figure 3: Peak forward current versus case

temperature

Figure 4: Junction capacitance versus reverse

voltage applied (typical values)

Figure 5: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 6: Non- repetitive peak surge forward

current versus pulse duration (sinusoidal

waveform)

0

1

2

3

4

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

F

(V)

I

F

(A)

T

a

= 150 °C

Pulse test : t

p

= 500 µs

T

a

= 25 °C

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

0 100 200 300 400 500 600 700 800 900 1000 1100 1200

V

R

(V)

I

R

(µA)

T

j

= 25 °C

T

j

= 150 °C

0

5

10

15

20

25

30

35

0 25 50 75 100 125 150 175

T

C

(°C)

I

M

(A)

T

δ

= tp/T

tp

δ = 0.1

δ = 0.3

δ = 0.5

δ = 1

δ = 0.7

0

20

40

60

80

100

120

140

160

180

200

0.1 1.0 10.0 100.0 1000.0 10000.0

V

R

(V)

C

j

(pF)

F = 1 MHz

V

OSC

= 30 mV

RMS

T

j

= 25 °C

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

t

p

(s)

Single pulse

Z

th(j-c)

/R

th(j-c)

1.E+01

1.E+02

1.E+03

1.E-05 1.E-04 1.E-03 1.E-02

t

p

(s)

T

a

= 25 °C

T

a

= 150 °C

I

FSM

(A)

STPSC2H12B-TR1

STPSC2H12B-TR1

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