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IRF1010EZSTRLP
P1-P3
P4-P6
P7-P9
P10-P12
IRF1010EZ/S/LPbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rain-t
o-Sour
ce Volt
age (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0
1
02
03
04
05
06
0
Q
G
Tot
al Gat
e Charge (nC
)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 48V
V
DS
= 30V
V
DS
= 12V
I
D
= 51A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
SD
, S
ource-to-
Drai
n Volt
age (V)
0.10
1.00
10.00
100.00
1000.00
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
1
10
100
V
DS
, D
rain-t
o-Sour
ce Volt
age (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
100µsec
Tc =
25°C
Tj
= 175°
C
Si
ngle Pul
se
IRF1010EZ/S/LPbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
T
J
, Junct
ion Tem
perat
ure (°C
)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 84A
V
GS
= 10V
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
1
, R
ectangular
Pul
se Durat
ion (
sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty
Fac
tor
D = t1/t2
2. P
eak Tj =
P dm x Zt
hjc +
Tc
Ri (°C/W)
τ
i (sec)
0.415 0.000246
0.410 0.000898
0.285 0.009546
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci
i
/
Ri
Ci=
τ
i
/
Ri
25
50
75
100
125
150
175
T
C
, C
ase Temperat
ure (°C
)
0
10
20
30
40
50
60
70
80
90
100
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limi
ted By
Package
IRF1010EZ/S/LPbF
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T
.
V
DS
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
Type
as
D.U.T
.
Current
Sampling
Resistors
+
-
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 14.
Threshold Voltage vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.
U.
T
L
V
DS
+
-
V
DD
DRI
V
ER
A
15V
20V
V
GS
25
50
75
100
125
150
175
St
arti
ng T
J
, Junct
ion Tem
perat
ure (°C
)
0
50
100
150
200
250
300
350
400
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TO
P 5.7A
9.1A
BO
TTOM
5
1A
-75
-50
-25
0
25
50
75
100
125
150
175
T
J
, T
emperatur
e ( °C
)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
P1-P3
P4-P6
P7-P9
P10-P12
IRF1010EZSTRLP
Mfr. #:
Buy IRF1010EZSTRLP
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 60V 84A 8.5mOhm 58nC
Lifecycle:
New from this manufacturer.
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