IPB70N12S3L12ATMA1

P1-P3 P4-P6 P7-P9

IPB70N12S3L-12

IPI70N12S3L-12, IPP70N12S3L-12

OptiMOS

®

-T Power-Transistor

Features

• OptiMOS

TM

- power MOSFET for automotive appilcations

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

C

=25 °C, V

GS

=10 V

70 A

T

C

=100 °C,

V

GS

=10 V

1)

48

Pulsed drain current

1)

I

D,pulse

T

C

=25 °C

280

Avalanche energy, single pulse

1)

E

AS

I

D

=35A

410 mJ

Avalanche current, single pulse

I

AS

-

70 A

Gate source voltage

V

GS

- ±20 V

Power dissipation

P

tot

T

C

=25 °C

125 W

Operating and storage temperature

T

j

, T

stg

- -55 ... +175 °C

Value

V

DS

120

V

R

DS(on),max

(SMD version)

11.8

mW

I

D

70

A

Product Summary

PG-TO220-3-1

PG-TO262-3-1

PG-TO263-3-2

Type

Package

Marking

IPB70N12S3L-12

PG-TO263-3-2

3N12L12

IPI70N12S3L-12

PG-TO262-3-1

3N12L12

IPP70N12S3L-12

PG-TO220-3-1

3N12L12

Rev. 1.0 page 1 2016-06-20

IPB70N12S3L-12

IPI70N12S3L-12, IPP70N12S3L-12

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

1)

Thermal resistance, junction - case

R

thJC

- - 1.2 K/W

Thermal resistance, junction -

ambient, leaded

R

thJA

- - 62

SMD version, device on PCB

R

thJA

minimal footprint - - 62

6 cm

2

cooling area

2)

- - 40

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0 V, I

D

= 1 mA

120 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=83µA

1.2 1.7 2.4

Zero gate voltage drain current

I

DSS

V

DS

=120V, V

GS

=0V,

T

j

=25°C

- 0.01 0.1 µA

V

DS

=120V, V

GS

=0V,

T

j

=125°C

2)

- 1 10

Gate-source leakage current

I

GSS

V

GS

=20V, V

DS

=0V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=4.5V, I

D

=70A

- 12.2 15.8

mW

V

GS

=4.5V, I

D

=70A,

SMD version

- 11.9 15.5

V

GS

=10 V, I

D

=70 A

- 10.1 12.1

V

GS

=10 V, I

D

=70 A,

SMD version

- 9.8 11.8

Values

Rev. 1.0 page 2 2016-06-20

IPB70N12S3L-12

IPI70N12S3L-12, IPP70N12S3L-12

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

1)

Input capacitance

C

iss

- 4270 5550 pF

Output capacitance

C

oss

- 950 1230

Reverse transfer capacitance

C

rss

- 90 135

Turn-on delay time

t

d(on)

- 10 - ns

Rise time

t

r

- 5 -

Turn-off delay time

t

d(off)

- 28 -

Fall time

t

f

- 5 -

Gate Charge Characteristics

1)

Gate to source charge

Q

gs

- 15 21 nC

Gate to drain charge

Q

gd

- 11 17

Gate charge total

Q

g

- 59 77

Gate plateau voltage

V

plateau

- 3.5 - V

Reverse Diode

Diode continous forward current

1)

I

S

- - 70 A

Diode pulse current

1)

I

S,pulse

- - 280

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=70 A,

T

j

=25 °C

0.6 1 1.2 V

Reverse recovery time

1)

t

rr

V

R

=60V, I

F

=50A,

di

F

/dt=100A/µs

- 80 - ns

Reverse recovery charge

1)

Q

rr

- 185 - nC

2)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

T

C

=25°C

Values

V

GS

=0V, V

DS

=25V,

f=1MHz

V

DD

=20 V, V

GS

=10 V,

I

D

=50 A, R

G

=3.5 W

V

DD

=96 V, I

D

=70 A,

V

GS

=0 to 10 V

1)

Defined by design. Not subject to production test.

Rev. 1.0 page 3 2016-06-20

P1-P3 P4-P6 P7-P9

IPB70N12S3L12ATMA1

Mfr. #:

Buy IPB70N12S3L12ATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CHANNEL 100+

Lifecycle:

New from this manufacturer.

Delivery:

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