©2001 Fairchild Semiconductor Corporation Rev. A, September 2001
FJZ594J
Si N-channel Junction FET
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
Thermal Characteristics
T
C
=25°C unless otherwise noted
Symbol Parameter Ratings Units
V
GDO
Gate-Drain Voltage -20 V
I
G
Gate Current 10 mA
I
D
Drain Current 1 mA
P
D
Power Dissipation 100 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
GDO
Gate-Drain Breakdown Voltage I
G
= -100uA -20 V
V
GS
(off) Gate-Source Cut-off Voltage V
DS
=5V, I
D
=1µA -0.6 -1.5 V
I
DSS
Drain Current V
DS
=5V, V
GS
=0 150 350 µA
ly
fs
l Forward Transfer Admittance V
DS
=5V, V
GS
=0, f=1MHz 0.4 1.2 mS
C
ISS
Input Capacitance V
DS
=5V, V
GS
=0, f=1MHz 3.5 pF
C
RSS
Output Capacitance V
DS
=5V, V
GS
=0, f=1MHz 0.65 pF
V
CC
=4.5V, R
L
=1kΩ, Cin=15pF, See the Specified Test Circuit
G
V
Voltage Gain V
IN
=10mV, f=1KHz -3 dB
∆G
VV
Reduced Voltage Characteristic V
IN
=10mV, f=1KHz
V
CC
=4.5V → 1.5V
-1.2 -3.5 dB
∆G
Vf
Frequency Characteristic f=1KHz to 110Hz -1 dB
Z
IN
Input Resistance f=1KHz 25 MΩ
Z
O
Output Resistance f=1KHz 700 Ω
THD Total Harmonic Distortion V
IN
=10mV, f=1KHz 1 %
V
NO
Output Noise Voltage V
IN
=0, A curve -110 dB
Symbol Parameter Max Units
R
θjA
Thermal Resistance, Junction to Ambient 1250 °C/W
FJZ594J
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
1. Drain 2. Source 3. Gate
SOT-623F1
2
3
