VS-6CWH02FNHM3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
1
Document Number: 94743
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultra fast Rectifier, 2 x 3 A FRED Pt
®
FEATURES
• Ultra fast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• AEC-Q101 qualified
• Meets JESD 201 class 2 whisker test
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
Vishay Semiconductors’ 200 V series are the state of the art
hyper fast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and hyper
fast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as well
as freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package DPAK (TO-252AA)
I
F(AV)
2 x 3 A
V
R
200 V
V
F
at I
F
0.9 V
t
rr
typ. See Recovery table
T
J
max. 175 °C
Diode variation Common cathode
Base
common
cathode
Common
cathode
2
4
13
Anode Anode
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
RRM
200 V
Average rectified forward current per device I
F(AV)
Total device, rated V
R
, T
C
= 159 °C 6
ANon-repetitive peak surge current I
FSM
50
Peak repetitive forward current per diode I
FM
Rated V
R
, square wave, 20 kHz, T
C
= 159 °C 6
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage V
BR
, V
R
I
R
= 100 μA 200 - -
V
Forward voltage V
F
I
F
= 3 A - - 1
I
F
= 3 A, T
J
= 125 °C - - 0.9
I
F
= 6 A - - 1.2
I
F
= 6 A, T
J
= 125 °C - - 1.08
Reverse leakage current I
R
V
R
= V
R
rated - - 5
μA
T
J
= 125 °C, V
R
= V
R
rated - - 100
Junction capacitance C
T
V
R
= 200 V - 12 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
