MBR1030 – MBR1050
Document number: DS23009 Rev. 11 - 4
June 2015
© Diodes Incorporated
OBSOL ETE – PA RT D I SCO N T INU ED
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%.
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 7)
Average Rectified Output Current
(Note 4) @T
C
= +125°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Thermal Characteristics
Typical Thermal Resistance Junction to Case (Note 5)
Operating and Storage Temperature Range
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Forward Voltage Drop @ I
F
= 10A, T
C
= +25°C
@ I
F
= 10A, T
C
= +125°C
Peak Reverse Current @T
C
= +25°C
at Rated DC Blocking Voltage (Note 7) @T
C
= +125°C
Typical Total Capacitance (Note 5)
Notes: 4. Thermal resistance junction to case mounted on heatsink.
5. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
6. RoHS revision 13.2.2003. High temperature solder exemptions applied, see EU Directive Annex Note 7.
7. Short duration pulse test used to minimize self-heating effect.
0
2
4
6
8
10
0 50 100 150
I , AVERAGE FORWARD CURRENT (A)
(AV)
T , CASE TEMPERATURE ( C)
Figure 1 Forward Current Derating Curve
C
°
0.1
1.0
10
50
0.2 0.4 1.0
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2 Typical Forward Characteristics
F
MBR1030 - MBR1045
MBR1050 / MBR1060