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IRFB7437PBF

P1-P3P4-P6P7-P9P10-P10
7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015
IRFB7437PbF
Fig. 18 - Typical Recovery Current vs. di
f
/dt
Fig 17. Threshold Voltage vs. Temperature
Fig. 20 - Typical Stored Charge vs. di
f
/dtFig. 19 - Typical Recovery Current vs. di
f
/dt
Fig. 21 - Typical Stored Charge vs. di
f
/dt
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
G
S
(
t
h
)
,
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 150μA
I
D
= 1.0mA
I
D
= 1.0A
0 200 400 600 800 1000
di
F
/dt (A/μs)
0
2
4
6
8
10
I
R
R
(
A
)
I
F
= 100A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
0
2
4
6
8
10
I
R
R
(
A
)
I
F
= 60A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
0
20
40
60
80
100
120
140
Q
R
R
(
n
C
)
I
F
= 60A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
0
20
40
60
80
100
120
140
Q
R
R
(
n
C
)
I
F
= 100A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015
IRFB7437PbF
Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms
Fig 23b. Unclamped Inductive Waveforms
Fig 23a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
Fig 25a. Gate Charge Test Circuit
Fig 25b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Inductor Current
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
V
GS
9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015
IRFB7437PbF
TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
P1-P3P4-P6P7-P9P10-P10

IRFB7437PBF

Mfr. #:
Buy IRFB7437PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 40V 2.0mOhm 195A HEXFET 230W 150nC
Lifecycle:
New from this manufacturer.
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