© 2011 IXYS All rights reserved
1 - 2
20110114a
DSA 9
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol Conditions Characteristic Values
typ. max.
I
R
V
R
= V
RRM
T
VJ
= T
VJM
3 mA
V
F
I
F
= 36 A T
VJ
= 25°C 1.4 V
V
T0
r
T
For power-loss calculations only
T
VJ
= T
VJM
0.85
15
V
mW
R
thJC
R
thJH
DC current
180° sine
DC current
2
2.17
3.0
K/W
K/W
K/W
d
S
d
A
a
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
2.0
2.0
100
mm
mm
m/s
2
Data according to IEC 60747
V
RRM
= 1200-1800 V
I
F(RMS)
= 18 A
I
FAVM
= 11 A
Avalanche Diode
Features
• International standard package
JEDEC DO-203 AA
• Planar passivated chips
Applications
• Supplies for DC power equipment
• DC supply for PWM inverter
• Field supply for DC motors
• Battery DC power supplies
Advantages
• Space and weight savings
• Simple mounting
• Improved temperature & power cycling
• Reduced protection circuits
Symbol Conditions Maximum Ratings
I
FRMS
I
FAVM
T
VJ
= T
VJM
T
C
= 150°C; 180° sine
18
11
A
A
P
RSM
T
VJM
, t
p
= 10 ms 4.5 kW
I
FSM
T
VJ
= 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
250
265
A
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
220
A
I
2
t
T
VJ
= 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
310
295
A
2
s
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
190
A
2
s
T
VJ
T
VJM
T
stg
-40...+180
180
-40...+180
°C
°C
°C
M
d
mounting torque 2.2...2.8 Nm
Weight
typical 5 g
A C
DO-203 AA
A = Anode, C = Cathode
C
A
V
RSM
V
V
(BR)min
V
V
RRM
V
Type
1300 1300 1200 DSA 9-12F
1700 1750 1600 DSA 9-16F
1900 1950 1800 DSA 9-18F
7.8
10.3
2.3
0.5
SW 11
19.711.5
0.5
10.5
4 2
0.8
max. 2
4.4
2.6
Ø 2
M5
4
Dimensions in mm (1 mm = 0.0394")
