ZTX553STOA

PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1  MARCH 94
FEATURES
* 100 Volt V
CEO
* 1 Amp continuous current
*P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX552 ZTX553 UNIT
Collector-Base Voltage V
CBO
-100 -120 V
Collector-Emitter Voltage V
CEO
-80 -100 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Power Dissipation: at T
amb
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range T
j:
T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL ZTX552 ZTX553 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-100 -120 V
I
C
=-100µA
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
-80 -100 V I
C
=-10mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 -5 V
I
E
=-100µA
Collector Cut-Off
Current
I
CBO
-0.1
-0.1
µA
V
CB
=-80V
V
CB
=-100V
Emitter Cut-Off Current I
EBO
-0.1 -0.1
µA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.25 -0.25 V I
C
=-150mA, I
B
=-15mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.1 -1.1 V I
C
=-150mA, I
B
=-15mA*
Base-Emitter
Turn-onn Voltage
V
BE(on)
-1.0 -1.0 V I
C
=-150mA, V
CE
=-10V*
Static Forward Current
Transfer Ratio
h
FE
40
10
150 40
10
200 I
C
=-150mA, V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
Transition Frequency f
T
150 150 MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance C
obo
12 12 MHz V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle 2%
E-Line
TO92 Compatible
ZTX552
ZTX553
3-196
C
B
E
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
IC - Collector Current (Amps)
V
C
E
(sat)
-
(V
olts)
IC - Collector Current (Amps) IC - Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
IC - Collector Current (Amps)
V
BE(on)
v I
C
h
FE
- Normalised Gain (%)
V
BE
(sa
t
)
- (V
olts)
V
B
E
-
(
V
olts)
I
C
- Collector Current (Amps)
VCE - Collector Voltage (Volts)
Safe Operating Area
-0.1 -100-1 -10
-0.01
-0.1
-1
-10
Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
100µs
-0.001
-0.01
-10-0.1 -1
20
40
60
80
100
-0.2
-0.001
-0.1
-1
-0.4
-0.6
-1.0
0
-0.001
-0.01
-1
-0.1
-0.2
-0.4
-0.6
-0.8
V
CE
=-10V
I
C
/I
B
=10
I
C
/I
B
=10
Switching Speeds
IC - Collector Current (Amps)
Swi
tching
t
i
m
e
-0.1
-1
I
B1
=I
B2
=I
C
/10
-0.01
ts
tf
td
tr
3
2
1
0
ts
µS
td
ns
60
40
20
80
100
0
tr
ns
120
80
40
160
200
0
600
400
200
0
tf
nS
100
-0.01
-0.0001
-0.001
-1
-0.01 -0.1
-0.6
-0.8
-1.0
-1.2
V
CE
=-10V
-0.4
-0.8
ZTX552
ZT
X
55
3
ZTX552
ZTX553
3-197
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1  MARCH 94
FEATURES
* 100 Volt V
CEO
* 1 Amp continuous current
*P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX552 ZTX553 UNIT
Collector-Base Voltage V
CBO
-100 -120 V
Collector-Emitter Voltage V
CEO
-80 -100 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Power Dissipation: at T
amb
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range T
j:
T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL ZTX552 ZTX553 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-100 -120 V
I
C
=-100µA
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
-80 -100 V I
C
=-10mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 -5 V
I
E
=-100µA
Collector Cut-Off
Current
I
CBO
-0.1
-0.1
µA
V
CB
=-80V
V
CB
=-100V
Emitter Cut-Off Current I
EBO
-0.1 -0.1
µA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.25 -0.25 V I
C
=-150mA, I
B
=-15mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.1 -1.1 V I
C
=-150mA, I
B
=-15mA*
Base-Emitter
Turn-onn Voltage
V
BE(on)
-1.0 -1.0 V I
C
=-150mA, V
CE
=-10V*
Static Forward Current
Transfer Ratio
h
FE
40
10
150 40
10
200 I
C
=-150mA, V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
Transition Frequency f
T
150 150 MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance C
obo
12 12 MHz V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle 2%
E-Line
TO92 Compatible
ZTX552
ZTX553
3-196
C
B
E
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
IC - Collector Current (Amps)
V
C
E
(sat)
-
(V
olts)
IC - Collector Current (Amps) IC - Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
IC - Collector Current (Amps)
V
BE(on)
v I
C
h
FE
- Normalised Gain (%)
V
BE
(sa
t
)
- (V
olts)
V
B
E
-
(
V
olts)
I
C
- Collector Current (Amps)
VCE - Collector Voltage (Volts)
Safe Operating Area
-0.1 -100-1 -10
-0.01
-0.1
-1
-10
Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
100µs
-0.001
-0.01
-10-0.1 -1
20
40
60
80
100
-0.2
-0.001
-0.1
-1
-0.4
-0.6
-1.0
0
-0.001
-0.01
-1
-0.1
-0.2
-0.4
-0.6
-0.8
V
CE
=-10V
I
C
/I
B
=10
I
C
/I
B
=10
Switching Speeds
IC - Collector Current (Amps)
Swi
tching
t
i
m
e
-0.1
-1
I
B1
=I
B2
=I
C
/10
-0.01
ts
tf
td
tr
3
2
1
0
ts
µS
td
ns
60
40
20
80
100
0
tr
ns
120
80
40
160
200
0
600
400
200
0
tf
nS
100
-0.01
-0.0001
-0.001
-1
-0.01 -0.1
-0.6
-0.8
-1.0
-1.2
V
CE
=-10V
-0.4
-0.8
ZTX552
ZT
X
55
3
ZTX552
ZTX553
3-197

ZTX553STOA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP Medium Power
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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