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STTH20LCD06CT

P1-P3P4-P6P7-P9P10-P10
January 2011 Doc ID 15898 Rev 2 1/10
10
STTH20LCD06C
Turbo2 ultrafast - high voltage rectifier for SMPS
Features
■ ultrafast switching
■ low reverse current
■ low thermal resistance
■ reduces conduction and switching losses
Description
The STTH20LCD06C uses ST Turbo2 technology.
This device is specially suited for switching power
supplies working with interleaved PFCs.
Table 1. Device summary
I
F(AV)
2 x 10 A
V
RRM
600 V
T
j
175 °C
V
F
(typ) 1.25 V
t
rr
(max) 50 ns
A1
K
A2
A1
K
A2
K
A1
A2
K
A1
A2
TO-220AB
STTH20LCD06CT
TO-220FPAB
STTH20LCD06CFP
D
2
PAK
STTH20LCD06CG-TR
www.st.com
Characteristics STTH20LCD06C
2/10 Doc ID 15898 Rev 2
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 1.2 x I
F(AV)
+ 0.04 x I
F
2
(RMS)
Table 2. Absolute ratings
(1)
1. Limiting values per diode at 25 °C, unless otherwise specified
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 600 V
I
F(RMS)
Forward current rms 30 A
I
F(AV)
Average forward
current, δ = 0.5
T
c
= 105 °C
TO-220AB,
D
2
PA K
Per diode 10 A
Per device 20 A
T
c
= 60 °C TO-220FPAB
Per diode 10 A
Per device 20 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 80 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(2)
2. condition to avoid thermal runaway for a diode on its own heatsink
175 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220AB, D
2
PA K 3. 5
°C/W
TO-220FPAB 5.8
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2 %
Reverse leakage
current
T
j
= 25 °C
V
R
= V
RRM
--1
µA
T
j
= 150 °C - 10 100
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2 %
Forward voltage drop
T
j
= 25 °C
I
F
= 10 A
--2
V
T
j
= 150 °C - 1.25 1.6
T
j
= 25 °C
I
F
= 20 A
- - 2.35
T
j
= 150 °C - 1.55 2
dPtot
dTj
<
1
Rth(j-a)
STTH20LCD06C Characteristics
Doc ID 15898 Rev 2 3/10
Table 5. Dynamic electrical characteristics
Symbol Parameter
Test conditions
Min. Typ. Max. Unit
t
rr
Reverse recovery time
I
F
= 0.5 A, I
rr
= 0.25 A,
I
R
= 1 A, T
j
= 25 °C
25
ns
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25 °C
35 50
I
RM
Reverse recovery current
I
F
= 10 A, dI
F
/dt = -50 A/µs,
V
R
= 400 V, T
j
= 125 °C
22.8A
t
fr
Forward recovery time
I
F
= 10 A, dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25 °C
230 ns
V
FP
Forward recovery voltage
I
F
= 10 A, dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25 °C
4V
Figure 1. Average forward power dissipation
versus average forward current
(per diode)
Figure 2. Forward voltage drop versus
forward current (per diode)
0
4
8
12
16
20
24
02468101214
P
F(AV)
(W)
T
δ = t
p
/T
t
p
δ = 0.1
δ = 0.2
δ = 0.5
δ = 0.05
δ = 1
0
20
40
60
80
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
I
FM
(A)
V
FM
(V)
T
j
= 150 °C
(Maximum values)
T
j
= 150 °C
(Typical values)
T
j
= 25 °C
(Maximum values)
Figure 3. Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220AB, D
2
PAK)
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Z
th(j-c)
/R
th(j-c)
TO-220AB
D
2
PAK
Single pulse
t
p
(s)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Z
th(j-c)
/R
th(j-c)
TO-220FPAB
Single pulse
t
p
(s)
P1-P3P4-P6P7-P9P10-P10

STTH20LCD06CT

Mfr. #:
Buy STTH20LCD06CT
Manufacturer:
STMicroelectronics
Description:
DIODE ARRAY GP 600V 10A TO220AB
Lifecycle:
New from this manufacturer.
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