GPAS1007 MNG

CREAT BY ART
- Glass passivated chip junction
- High efficiency, Low VF
- High current capability
- High surge current capability
- Low power loss
- Halogen-free according to IEC 61249-2-21
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
V
RRM
50 100 200 400 600 800 1000 V
V
RMS
35 70 140 280 420 560 700 V
V
DC
50 100 200 400 600 800 1000 V
I
F(AV)
A
C
J
pF
R
θJC
°C/W
T
J
°C
T
STG
°C
Document Number: DS_D0000118 Version: B15
GPAS1001 - GPAS1007
Taiwan Semiconductor
10A, 50V - 1000V Glass Passivated Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER SYMBOL
MECHANICAL DATA
TO-263AB (D
2
PAK)
Case: TO-263AB (D
2
PAK)
Moisture sensitivity level: level 1, per J-STD-020
Polarity: As marked
Weight: 1.7 g (approximately)
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 10
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
150 A
Maximum instantaneous forward voltage (Note 1)
I
F
= 10 A
V
F
V
Maximum reverse current @ rated V
R
T
J
=25°C
I
R
5
μA
T
J
=125°C
100
- 55 to +150
Storage temperature range - 55 to +150
Note 1: Pulse test with PW=300μs, 1% duty cycle
50Typical junction capacitance (Note 3)
Typical thermal resistance 4
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
GPAS
1001
GPAS
1002
GPAS
1003
GPAS
1004
GPAS
1005
GPAS
1006
GPAS
1007
1.1
Operating junction temperature range
PART NO.
*: Optional available
PART NO.
GPAS1007
(T
A
=25°C unless otherwise noted)
Document Number: DS_D0000118 Version: B15
D
2
PAK
Taiwan Semiconductor
ORDERING INFORMATION
PACKING CODE
PACKING CODE
SUFFIX
(*)
GPAS1001 - GPAS1007
EXAMPLE
PREFERRED
PART NO.
PACKING CODE
PACKING CODE
SUFFIX
PACKAGE
GPAS100x
(Note 1)
RN
G
D
2
PAK
MN
RATINGS AND CHARACTERISTICS CURVES
800 / 13" Plastic reel
800 / 13" Paper reel
PACKING
Green compound
DESCRIPTION
GPAS1007 RNG RN G
Note 1: "x" defines voltage from 50V (GPAS1001) to 1000V (GPAS1007)
0
2
4
6
8
10
12
0 50 100 150
AVERAGE FORWARD CURRENT(A)
CASE TEMPERATURE(
°
C)
FIG.1 MAXMUM FORWARD CURRENT
DERATING CURVE
RESISTIVE OF
INDUCTIVE LOAD
0
25
50
75
100
125
150
175
1 10 100
PEAK FORWARD SURGE CURRENT(A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
T
J
=125°C
T
J
=25°C
0.1
1
10
100
0.6 0.8 1 1.2 1.4 1.6 1.8 2
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 4 TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
Pulse Width=300us
1% Duty Cycle
Min Max Min Max
A
-
10.5 - 0.413
B 14.60 15.88 0.575 0.625
C 2.41 2.67 0.095 0.105
D 0.68 0.94 0.027 0.037
E 2.29 2.79 0.090 0.110
F 4.44 4.70 0.175 0.185
G 1.14 1.40 0.045 0.055
H 1.14 1.40 0.045 0.055
I 8.25 9.25 0.325 0.364
J 0.36 0.53 0.014 0.021
K 2.03 2.79 0.080 0.110
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D0000118 Version: B15
G 2.5 0.098
E 16.9 0.665
GPAS1001 - GPAS1007
Taiwan Semiconductor
F 9.5 0.374
C 1.1 0.043
D 3.5 0.138
A 10.8 0.425
B 8.3 0.327
MARKING DIAGRAM
PACKAGE OUTLINE DIMENSIONS
TO-263AB (D
2
PAK)
DIM.
Unit (mm) Unit (inch)
SUGGESTED PAD LAYOUT
Symbol Unit (mm) Unit (inch)
0
20
40
60
80
100
120
0.1 1 10 100
JUNCTION CAPACITANCE (pF)
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vslg=50mVp-p

GPAS1007 MNG

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
DIODE GEN PURP 10A TO263AB
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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