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DMP2008UFG-13

P1-P3P4-P6
DMP2008UFG
ADVANCE INFORMATION
ADVANCE INFORMATION
20V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
®
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
-20V
8mΩ @ V
GS
= -4.5V
-14A
9.8mΩ @ V
GS
= -2.5V
-10A
13mΩ @ V
GS
= -1.8V
-9.3A
17mΩ @ V
GS
= -1.5V
-8.3A
Description
This MOSFET is designed to minimize the on-
state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
• Load Switch
• Power Management Functions
Features
• Low R
DS(ON)
– ensures on state losses are minimized
• Small form factor thermally efficient package enables higher
density end products
• Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: POWERDI3333-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Case
POWERDI3333-8
POWERDI3333-8
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Bottom View
Internal Schematic
S
S
S
G
D
D
D
D
Pin 1
Top View
S36 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)
Source
Gate
Drain
S36
YYWW
POWERDI3333-8
POWERDI is a registered trademark of Diodes Incorporated
DMP2008UFG
Document number: DS35694 Rev. 14 - 2
1 of 6
www.diodes.com
August 2014
© Diodes Incorporated
DMP2008UFG
ADVANCE INFORMATION
ADVANCE INFORMATION
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
-20
V
Gate-Source Voltage (Note 5)
V
GSS
±8
V
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
I
D
-14
-11
-54
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
-80
A
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
-2.2
A
Avalanche Current (Note 8)
I
AS
-15
A
Avalanche Energy (Note 8)
E
AS
-113
mJ
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.4
W
T
C
= +25°C
41
Thermal Resistance, Junction to Ambient
(Note 5)
R
Θ
JA
52
°C/W
(Note 6)
137
Thermal Resistance, Junction to Case (Note 6)
R
Θ
JC
3.0
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BV
DSS
-20
—
—
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
—
—
-1
µA
V
DS
= -16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
—
—
±100
nA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
V
GS(th)
-0.4
—
-1.0
V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS (ON)
—
—
8
mΩ
V
GS
= -4.5V, I
D
= -12A
—
—
9.8
V
GS
= -2.5V, I
D
= -10A
—
—
13
V
GS
= -1.8V, I
D
= -9.3A
—
—
17
V
GS
= -1.5V, I
D
= -8.3A
Forward Transfer Admittance
|Y
fs
|
—
42
—
S
V
DS
= -5V, I
D
= -12A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
—
6909
—
pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
—
635
—
Reverse Transfer Capacitance
C
rss
—
563
—
Gate Resistance
R
G
—
2.5
—
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V)
Q
g
—
72
—
nC
V
DD
= -10V, I
D
= -12A
Total Gate Charge (V
GS
= -2.5V)
Q
g
—
40
—
Gate-Source Charge
Q
gs
—
8.6
—
Gate-Drain Charge
Q
gd
—
14.5
—
Turn-On Delay Time
t
D(on)
—
22
—
ns
V
GS
= -4.5V, V
DD
= -10V,
R
G
= 6Ω, I
D
= -12A
Turn-On Rise Time
t
r
—
33
—
Turn-Off Delay Time
t
D(off)
—
291
—
Turn-Off Fall Time
t
f
—
124
—
BODY DIODE CHARACTERISTICS
Diode Forward Voltage V
SD
—
-0.7
—
V
V
GS
= 0V, I
S
= -12A
—
-0.7
—
V
V
GS
= 0V, I
S
= -2A
Reverse Recovery Time (Note 10)
t
rr
—
25
—
ns
I
F
= -12A, di/dt = 100A/µs
Reverse Recovery Charge (Note 10)
Q
rr
—
15
—
nC
I
F
= -12A, di/dt = 100A/µs
Notes: 5. AEC-Q101 V
GS
maximum is ±6.4V.
6. R
Θ
JA
is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R
Θ
JC
is guaranteed by design
while R
Θ
JA
is determined by the user’s board design.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
8 .UIS in production with L = 1mH, T
J
= +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
DMP2008UFG
Document number: DS35694 Rev. 14 - 2
2 of 6
www.diodes.com
August 2014
© Diodes Incorporated
DMP2008UFG
ADVANCE INFORMATION
ADVANCE INFORMATION
10
20
30
40
50
0
0
0.5
1.0 1.5 2.0
-V , DRAIN -SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
-I , DRAIN CURRENT (A)
D
V = 4.5V
GS
V = 2.5V
GS
V = 2.0V
GS
V = 1.8V
GS
V = 1.5V
GS
V = 1.2V
GS
0 0.5 1.0 1.5
2.0
0
5
10
15
20
25
30
-I , DRAIN CURRENT (A)
D
-V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
T = 150 C
A
°
T = 125 C
A
°
T = 85 C
A
°
T = 25 C
A
°
T = -55 C
A
°
V = -5.0V
DS
0.01
0.02
0.03
0.04
0.05
0
10 20 30 40 50
0
-I , DRAIN SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R ,DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
0.005
0.015
0.025
0.010
0.020
0.030
0
1 2
3 4
5 6 7
8
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
R ,
DR
AI
N
-S
OU
RCE ON-RESISTANCE ( )
DS(ON)
Ω
I = -12A
T = 125°C
D
A
I = -12A
T = 25°C
D
A
0.004
0.008
0.012
0.016
0
0.020
0 5 10 15 20 25 30
-I , DRAIN SOURCE CURRENT (A)
Fig. 5 Typical On-Resistance vs.
Drain Current and Temperature
D
R , DRAIN-
SOURCE ON-RES
ISTANCE( )
DS(ON)
Ω
T = -55 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T = 125 C
A
°
T = 150 C
A
°
V = -4.5V
GS
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
2.0
1.0
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 6 On-Resistance Variation with Temperature
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
POWERDI is a registered trademark of Diodes Incorporated
DMP2008UFG
Document number: DS35694 Rev. 14 - 2
3 of 6
www.diodes.com
August 2014
© Diodes Incorporated
P1-P3P4-P6

DMP2008UFG-13

Mfr. #:
Buy DMP2008UFG-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 20V P-CH MOSFET
Lifecycle:
New from this manufacturer.
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