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SPB80N03S2L-06

P1-P3P4-P6P7-P8
2003-05-09
Page 4
SPI80N03S2L-06
SPP80N03S2L-06,SPB80N03S2L-06
1 Power dissipation
P
tot
= f (T
C
)
parameter: V
GS
≥ 4 V
0 20 40 60 80 100 120 140 160
°C
190
T
C
0
20
40
60
80
100
120
W
160
SPP80N03S2L-06
P
tot
2 Drain current
I
D
= f (T
C
)
parameter: V
GS
≥ 10 V
0 20 40 60 80 100 120 140 160 °C 190
T
C
0
10
20
30
40
50
60
70
A
90
SPP80N03S2L-06
I
D
4 Max. transient thermal impedance
Z
thJC
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPP80N03S2L-06
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
C
= 25 °C
10
-1
10
0
10
1
10
2
V
V
DS
0
10
1
10
2
10
3
10
A
SPP80N03S2L-06
I
D
R
DS(on)
=
V
DS
/
I
D
1 ms
100 µs
t
p
= 22.0µs
2003-05-09
Page 5
SPI80N03S2L-06
SPP80N03S2L-06,SPB80N03S2L-06
5 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25°C
parameter: t
p
= 80 µs
0 0.5 1 1.5 2 2.5 3 3.5 4
V
5
V
DS
0
20
40
60
80
100
120
140
160
A
190
SPP80N03S2L-06
I
D
V
GS
[V]
a
a 3.5
b
b 4.0
c
c 4.5
d
d 5.0
e
e 6.0
f
Ptot = 150W
f 10.0
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
0 20 40 60 80 100 120 140 160 A 200
I
D
0
10
20
30
40
50
60
70
80
mΩ
100
R
DS(on)
a
b
c
d
e
f
V
GS
[V]=
a= 3.5
b= 4
c= 4.5
d= 5
e= 6
f= 10
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
≥ 2 x I
D
x R
DS(on)max
parameter: t
p
= 80 µs
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
V
GS
0
20
40
60
80
100
120
A
160
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
); T
j
=25°C
parameter: g
fs
0 20 40 60 80 A 120
I
D
0
10
20
30
40
50
60
70
80
90
100
S
120
g
fs
2003-05-09
Page 6
SPI80N03S2L-06
SPP80N03S2L-06,SPB80N03S2L-06
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 80 A, V
GS
= 10 V
-60 -20 20 60 100 140
°C
200
T
j
0
1
2
3
4
5
6
7
8
9
10
11
12
mΩ
15
SPP80N03S2L-06
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (T
j
)
parameter: V
GS
= V
DS
-60 -20 20 60 100 °C 180
T
j
0
0.5
1
1.5
2
V
3
V
GS(th)
1mA
83µA
11 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0V, f=1 MHz
0 5 10 15 20 V 30
V
DS
2
10
3
10
4
10
pF
C
C
iss
C
oss
C
rss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: T
j
, tp = 80 µs
0 0.4 0.8 1.2 1.6 2 2.4
V
3
V
SD
0
10
1
10
2
10
3
10
A
SPP80N03S2L-06
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 175 °C typ
T
j
= 175 °C (98%)
P1-P3P4-P6P7-P8

SPB80N03S2L-06

Mfr. #:
Buy SPB80N03S2L-06
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 80A D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
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