NRVTSA4100E
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100
V
Average Rectified Forward Current
(T
L
= 142°C)
I
F(AV)
4.0 A
Peak Repetitive Forward Current,
(Square Wave, 20 kHz, T
L
= 135°C)
I
FRM
8.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
150 A
Storage Temperature Range T
stg
−65 to +175 °C
Operating Junction Temperature T
J
−55 to +175 °C
ESD Rating (Human Body Model) 1B
ESD Rating (Machine Model) M3
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Thermal Resistance, Junction−to−Lead, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
R
θ
JL
− 16.2 °C/W
Thermal Resistance, Junction−to−Ambient, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
R
θ
JA
− 90 °C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(i
F
= 1.0 Amps, T
J
= 25°C)
(i
F
= 4.0 Amps, T
J
= 25°C)
(i
F
= 1.0 Amps, T
J
= 125°C)
(i
F
= 4.0 Amps, T
J
= 125°C)
v
F
0.45
0.61
0.36
0.53
−
0.68
−
0.59
V
Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
i
R
3.5
2.0
9.0
5.0
mA
mA
Diode Capacitance
(Rated dc Voltage, T
J
= 25°C, f = 1 MHz)
C
d
55
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
