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FII40-06D

P1-P3P4-P4
© 2011 IXYS All rights reserved
1 - 4
20110119a
FII 40-06D
IXYS reserves the right to change limits, test conditions and dimensions.
I
C25
= 40 A
V
CES
= 600 V
V
CE(sat) typ.
= 1.8 V
IGBT phaseleg
in ISOPLUS i4-PAC™
Features
• NPT IGBT technology
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
• HiPerFRED™ diode
- optimized fast and soft reverse
recovery
- low operating forward voltage
- low leakage current
• ISOPLUS i4-PAC™ package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
• single phaseleg
- buck-boost chopper
• H bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
• three phase bridge
- AC drives
- controlled rectifier
IGBT
Symbol Conditions Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C 600 V
V
GES
±
20 V
I
C25
I
C90
T
C
= 25°C
T
C
= 90°C
40
25
A
A
I
CM
V
CEK
V
GE
=
±
15 V; R
G
= 33 Ω; T
VJ
= 125°C
RBSOA Clamped inductive load; L = 100 µH
60
V
CES
A
t
SC
(SCSOA)
V
CE
= V
CES
; V
GE
=
±
15 V; R
G
= 33 Ω
T
VJ
= 125°C; non-repetitive
10 µs
P
tot
T
C
= 25°C 125 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
I
C
= 25 A; V
GE
= 15 V T
VJ
= 25°C
T
VJ
= 125°C
1.8
2.0
2.2 V
V
V
GE(th)
I
C
= 0.7 mA; V
GE
= V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C 0.6
0.6 mA
mA
I
GES
V
CE
= 0 V; V
GE
=
±
20 V 200 nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Inductive load T
VJ
= 125°C
V
CE
= 300 V; I
C
= 25 A
V
GE
=
±
15 V; R
G
= 33 Ω
50
50
270
40
1.2
0.8
ns
ns
ns
ns
mJ
mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 1.6 nF
Q
Gon
V
CE
= 300 V; V
GE
= 15 V; I
C
= 30 A 95 nC
R
thJC
R
thJH
with heatsink compound 2
1 K/W
K/W
2
3
4
1
E72873
5
© 2011 IXYS All rights reserved
2 - 4
20110119a
FII 40-06D
IXYS reserves the right to change limits, test conditions and dimensions.
Diode
Symbol Conditions
Maximum Ratings
V
RRM
T
VJ
= 25°C to 150°C 600 V
I
F25
I
F90
T
C
= 25°C
T
C
= 90°C
30
15
A
A
Component
Symbol Conditions Maximum Ratings
T
VJ
T
stg
operating -55...+150
-55...+125
°C
°C
V
ISOL
I
ISOL
< 1 mA; 50/60 Hz; t = 1 s 2500 V~
F
C
Mounting force with clip 20...120 Nm
Symbol Conditions Characteristic Values
min. typ. max.
C
P
coupling capacity between shorted
pins and mounting tab in the case
40 pF
d
S
, d
A
d
S
, d
A
pin - pin
pin - backside metal
1.7
5.5
mm
mm
Weight
6 g
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
F
= 25 A T
VJ
= 25°C
T
VJ
= 125°C
2.5
1.7
2.8 V
V
I
RM
t
rr
I
F
= 15 A; di
F
/dt = -400 A/µs;
V
R
= 300 V; V
GE
= 0 V; T
VJ
= 125°C
7
50
A
ns
R
thJC
R
thJH
(per diode)
with heatsink compound 4.6
2.3 K/W
K/W
b4
4x e
E
W
A
A2
A1
C
b2
b
E1
D1
D2
L1
L
D
R
Q
1 2 53 4
MIN MAX MIN MAX
A 4.83 5.21 0.190 0.205
A1 2.59 3.00 0.102 0.118
A2 1.17 2.16 0.046 0.085
b 1.14 1.40 0.045 0.055
b2 1.47 1.73 0.058 0.068
b4 2.54 2.79 0.100 0.110
C 0.51 0.74 0.020 0.029
D 20.80 21.34 0.819 0.840
D1 14.99 15.75 0.590 0.620
D2 1.65 2.03 0.065 0.080
E 19.56 20.29 0.770 0.799
E1 16.76 17.53 0.660 0.690
e
L 19.81 21.34 0.780 0.840
L1 2.11 2.59 0.083 0.102
Q 5.33 6.20 0.210 0.244
R
2.54
4.57 0.100 0.180
W
―
0.10
―
0.004
DIM.
MILLIMETER INCHES
3.81 BSC 0.15 BSC
Die konvexe Form des Substrates ist typ. < 0.05 mm über
der Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.05 mm over plastic
surface level ofdevice bottom side
© 2011 IXYS All rights reserved
3 - 4
20110119a
FII 40-06D
IXYS reserves the right to change limits, test conditions and dimensions.
0 200 400 600 800 1000
0
10
20
30
40
50
0
30
60
90
120
150
0 1 2 3 4 5 6
0
15
30
45
60
75
90
0 40 80 120 160
0
5
10
15
20
0 1 2 3 4 5 6
0
15
30
45
60
75
90
V
CE
V
I
C
V
CE
A
I
C
V
nC
Q
G
-di/dt
V
V
GE
I
RM
t
rr
A/
µ
s
I
RM
t
rr
9V
11V
A
9V
11V
V
GE
= 17V
15V
13V
A
4 6 8 10 12 14 16
0
15
30
45
60
75
90
V
V
GE
A
I
C
T
J
= 25°C
T
J
= 125°C
0,0 0,5 1,0 1,5 2,0
0
15
30
45
60
75
90
V
V
F
I
F
T
J
= 25°CT
J
= 125°C
A
ns
25T60
25T60
25T60
25T60
25T60
T
J
= 25°C
T
J
= 125°C
V
GE
= 17 V
15 V
13 V
T
J
= 125°C
V
R
= 300 V
I
F
= 30 A
V
CE
= 20V
V
CE
= 300 V
I
C
= 30 A
25T60
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics
of free wheeling diode
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics
of free wheeling diode
P1-P3P4-P4

FII40-06D

Mfr. #:
Buy FII40-06D
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 600V 40A
Lifecycle:
New from this manufacturer.
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