RJK6006DPD Preliminary
REJ03G1935-0100 Rev.1.00 Page 2 of 6
Jun 01, 2010
Electrical Characteristics
(Ta = 25C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR) DSS
600 — — V I
D
= 10 mA, V
GS
= 0
Zero gate voltage drain current I
DSS
— — 1 A V
DS
= 600 V, V
GS
= 0
Gate to source leak current I
GSS
— — 0.1 A V
GS
= 30 V, V
DS
= 0
Gate to source cutoff voltage V
GS (off)
3.0 — 4.5 V V
DS
= 10 V, I
D
= 1 mA
Static drain to source on state resistance R
DS (on)
— 1.4 1.6 I
D
= 2.5 A, V
GS
= 10 V
Note 5
Input capacitance Ciss — 600 — pF
Output capacitance Coss — 70 — pF
Reverse transfer capacitance Crss — 10 — pF
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Turn-on delay time t
d (on)
— 25 — ns
Rise time t
r
— 17 — ns
Turn-off delay time t
d (off)
— 60 — ns
Fall time t
f
— 10 — ns
I
D
= 2.5 A
V
GS
= 10 V
R
L
= 80
Rg = 10
Total gate charge Qg — 19 — nC
Gate to source charge Qgs — 3.4 — nC
Gate to drain charge Qgd — 9.2 — nC
V
DD
= 480 V
V
GS
= 10 V
I
D
= 5 A
Body-drain diode forward voltage V
DF
— 0.9 1.5 V I
F
= 5 A, V
GS
= 0
Note 5
Body-drain diode reverse recovery time t
rr
— 250 — ns I
F
= 5 A, V
GS
= 0
di
F
/dt = 100 A/s
Note: 5. Pulse test