FDH15N50 Datasheet FDH15N50, FDP15N50 | P1-P3

August 2003

FDH15N50 / FDP15N50 / FDB15N50 RevD2

FDH15N50 / FDP15N50 / FDB15N50

15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET

Applications

Switch Mode Power Supplies(SMPS), such as

• PFC Boost

• Two-Switch Forward Converter

• Single Switch Forward Converter

• Flyback Converter

• Buck Converter

• High Speed Switching

Features

• Low Gate Charge Q

g

results in Simple Drive

Requirement

• Improved Gate, Avalanche and High Reapplied dv/dt

Ruggedness

• Reduced r

DS(ON)

• Reduced Miller Capacitance and Low Input Capacitance

• Improved Switching Speed with Low EMI

• 175°C Rated Junction Temperature

Absolute Maximum Ratings T

C

= 25

o

C unless otherwise noted

Thermal Characteristics

Symbol Parameter Ratings Units

V

DSS

Drain to Source Voltage 500 V

V

GS

Gate to Source Voltage ±30 V

I

D

Drain Current

15 A

Continuous (T

C

= 25

o

C, V

GS

= 10V)

Continuous (T

C

= 100

o

C, V

GS

= 10V) 11 A

Pulsed

1

60 A

P

D

Power dissipation

Derate above 25

o

C

300

2

W

W/

o

C

T

J

, T

STG

Operating and Storage Temperature -55 to 175

o

C

Soldering Temperature for 10 seconds 300 (1.6mm from case)

o

C

R

θJC

Thermal Resistance Junction to Case 0.50

o

C/W

R

θJA

Thermal Resistance Junction to Ambient (TO-247) 40

o

C/W

R

θJA

Thermal Resistance Junction to Ambient (TO-220, TO-263) 62

o

C/W

D

G

S

DRAIN

(FLANGE)

Package

Symbol

DRAIN

SOURCE

GATE

DRAIN

SOURCE

GATE

TO-263AB

FDB SERIES

GATE

SOURCE

DRAIN

(FLANGE)

TO-220AB

FDP SERIES

TO-247

FDH SERIES

DRAIN

(BOTTOM)

FDH15N50 / FDP15N50 / FDB15N50

Package Marking and Ordering Information

Electrical Characteristics

T

J

= 25°C (unless otherwise noted)

Statics

Dynamics

Avalanche Characteristics

Drain-Source Diode Characteristics

Notes:

1: Repetitive rating; pulse width limited by maximum junction temperature

2: Starting T

J

= 25°C, L = 7.0mH, I

AS

= 15A

Device Marking Device Package Reel Size Tape Width Quantity

FDH15N50 FDH15N50 TO-247 Tube - 30

FDP15N50 FDP15N50 TO-220 Tube - 50

FDB15N50 FDB15N50 TO-263 330mm 24mm 800

Symbol Parameter Test Conditions Min Typ Max Units

B

VDSS

Drain to Source Breakdown Voltage I

D

= 250µA, V

GS

= 0V 500 - - V

∆B

VDSS

/∆T

J

Breakdown Voltage Temp. Coefficient

Reference to 25

o

C,

ID = 1mA

-0.58-V/°C

r

DS(ON)

Drain to Source On-Resistance V

GS

= 10V, I

D

= 7.5A - 0.33 0.38 Ω

V

GS(th)

Gate Threshold Voltage V

DS

= V

GS

, I

D

= 250µA 2.0 3.4 4.0 V

I

DSS

Zero Gate Voltage Drain Current

V

DS

= 500V T

C

= 25

o

C- - 25

µA

V

GS

= 0V T

C

= 150

o

C- - 250

I

GSS

Gate to Source Leakage Current V

GS

= ±30V - - ±100 nA

g

fs

Forward Transconductance V

DD

= 10V, I

D

= 7.5A 10 - - S

Q

g(TOT)

Total Gate Charge at 10V

V

GS

= 10V,

V

DS

= 400V,

I

D

= 15A

-3341nC

Q

gs

Gate to Source Gate Charge - 7.2 10 nC

Q

gd

Gate to Drain “Miller” Charge - 12 16 nC

t

d(ON)

Turn-On Delay Time

V

DD

= 250V,

I

D

= 15A,

R

G

= 6.2Ω,

R

D

= 17Ω

-9-ns

t

r

Rise Time - 5.4 - ns

t

d(OFF)

Turn-Off Delay Time - 26 - ns

t

f

Fall Time - 5 - ns

C

ISS

Input Capacitance

V

DS

= 25V, V

GS

= 0V,

f = 1MHz

-1850- pF

C

OSS

Output Capacitance - 230 - pF

C

RSS

Reverse Transfer Capacitance - 16 - pF

E

AS

Single Pulse Avalanche Energy

2

760 - - mJ

I

AR

Avalanche Current - - 15 A

I

S

Continuous Source Current

(Body Diode)

MOSFET symbol

showing the

integral reverse

p-n junction diode.

--15A

I

SM

Pulsed Source Current

1

(Body Diode)

--60A

V

SD

Source to Drain Diode Voltage I

SD

= 15A - 0.86 1.2 V

t

rr

Reverse Recovery Time I

SD

= 15A, di

SD

/dt = 100A/µs - 470 730 ns

Q

RR

Reverse Recovered Charge I

SD

= 15A, di

SD

/dt = 100A/µs - 5 6.6 µC

D

G

S

FDH15N50 / FDP15N50 / FDB15N50

Typical Characteristics

Figure 1. Output Characteristics Figure 2. Output Characteristics

Figure 3. Transfer Characteristics Figure 4. Normalized Drain To Source On

Resistance vs Junction Temperature

Figure 5. Capacitance vs Drain To Source

Voltage

Figure 6. Gate Charge Waveforms For Constant

Gate Current

1

10

100

110100

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

I

D

, DRAIN TO SOURCE CURRENT (A)

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

V

GS

DESCENDING

10V

6.5V

6V

5.5V

5V

4.5V

T

J

= 25

o

C

1

10

100

110100

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

I

D

, DRAIN TO SOURCE CURRENT (A)

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

V

GS

DESCENDING

10V

6V

5.5V

5V

4.5V

4V

T

J

= 175

o

C

0

10

20

30

40

50

60

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

I

D

, DRAIN CURRENT (A)

V

GS

, GATE TO SOURCE VOLTAGE (V)

TJ = 25

o

C

TJ = 175

o

C

PULSE DURATION = 80

µ

s

DUTY CYCLE = 0.5% MAX

VDD = 100V

NORMALIZED ON RESISTANCE

TJ, JUNCTION TEMPERATURE (

o

C)

0

0.5

1.0

1.5

2.0

2.5

3.5

-50 -25 0 25 50 75 100 150 175

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

V

GS

= 10V, I

D

= 7.5A

125

3.0

10

100

1000

4000

1 10 100

C, CAPACITANCE (pF)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

C

ISS

C

OSS

C

RSS

V

GS

= 0V, f = 1MHz

0

3

6

12

15

0 10203040

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

I

D

= 15A

9

50

250V

400V

100V

FDH15N50

FDH15N50

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