APT30M40JVR Datasheet APT30M40JVR | P1-P3

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250µA)

On State Drain Current

2

(V

DS

> I

D(on)

x R

DS(on)

Max, V

GS

= 10V)

Drain-Source On-State Resistance

2

(V

GS

= 10V, 0.5 I

D[Cont.]

)

Zero Gate Voltage Drain Current (V

DS

= V

DSS

, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 0.8 V

DSS

, V

GS

= 0V, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 2.5mA)

050-5552 Rev C

MAXIMUM RATINGS All Ratings: T

C

= 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J

,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

C

= 25°C

Pulsed Drain Current

1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

C

= 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

1

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

4

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Amps

Ohms

µA

nA

Volts

MIN TYP MAX

300

70

0.040

25

250

±100

24

APT30M40JVR

300

70

280

±30

±40

450

3.6

-55 to 150

300

70

50

2500

APT30M40JVR

300V 70A 0.040Ω

G

D

S

SOT-227

G

S

D

ISOTOP

®

"UL Recognized"

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 57 92 15 15 FAX: (33) 5 56 47 97 61

APT Website - http://www.advancedpower.com

Power MOS V

®

is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • Popular SOT-227 Package

POWER MOS V

®

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

DYNAMIC CHARACTERISTICS

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= I

D[Cont.]

@ 25°C

V

GS

= 15V

V

DD

= 0.5 V

DSS

I

D

= I

D[Cont.]

@ 25°C

R

G

= 0.6Ω

MIN TYP MAX

8500 10200

1500 2100

390 585

285 425

56 85

120 180

16 32

20 40

48 72

48

UNIT

pF

nC

ns

APT30M40JVR

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

3

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

050-5552 Rev C

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current

1

(Body Diode)

Diode Forward Voltage

2

(V

GS

= 0V, I

S

= -I

D[Cont.]

)

Reverse Recovery Time (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/µs)

Reverse Recovery Charge (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/µs)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

UNIT

Amps

Volts

ns

µC

MIN TYP MAX

70

280

1.3

530

11.5

Z

θ

JC

, THERMAL IMPEDANCE (°C/W)

10

-5

10

-4

10

-3

10

-2

10

-1

1.0 10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.3

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D =

t

1

/

t

2

Peak T

J

= P

DM

x Z

θJC

+ T

C

t

1

t

2

P

DM

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01

1

Repetitive Rating: Pulse width limited by maximum junction

3

See MIL-STD-750 Method 3471

temperature.

4

Starting T

j

=

+25°C, L = 1.02mH, R

G

=

25Ω, Peak I

L

= 70A

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL/PACKAGE CHARACTERISTICS

Symbol

R

θJC

R

θJA

V

Isolation

Torque

MIN TYP MAX

0.28

40

2500

13

UNIT

°C/W

Volts

lb•in

Characteristic

Junction to Case

Junction to Ambient

RMS Voltage

(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)

Maximum Torque for Device Mounting Screws and Electrical Terminations.

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

V

GS

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

D

, DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

DS

(ON) vs DRAIN CURRENT

T

C

, CASE TEMPERATURE (°C) T

J

, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

T

J

, JUNCTION TEMPERATURE (°C) T

C

, CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES) I

D

, DRAIN CURRENT (AMPERES) I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

V

GS

(TH), THRESHOLD VOLTAGE BV

DSS

, DRAIN-TO-SOURCE BREAKDOWN R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED) VOLTAGE (NORMALIZED)

0 306090120150 0123456

02468 04080120160200

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

APT30M40JVR

I

D

= 0.5 I

D

[Cont.]

V

GS

= 10V

150

120

90

60

30

0

1.3

1.2

1.1

1.0

0.9

0.8

1.20

1.15

1.10

1.05

1.00

0.95

0.90

1.2

1.1

1.0

0.9

0.8

0.7

0.6

150

120

90

60

30

0

150

120

90

60

30

0

80

60

40

20

0

2.5

2.0

1.5

1.0

0.5

0.0

050-5552 Rev C

V

DS

> I

D

(ON) x R

DS

(ON)MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

5V

4.5V

4V

V

GS

=6.5V, 7V, 10V & 15V

V

GS

=15V

V

GS

=10V

T

J

= +25°C

T

J

= -55°C

T

J

= +125°C

T

J

= +125°C

T

J

= +25°C

V

GS

=6.5V & 7V

5.5V

V

GS

=10V

6V

5V

4.5V

4V

5.5V

6V

V

GS

=20V

T

J

= -55°C

NORMALIZED TO

V

GS

= 10V @ 0.5 I

D

[Cont.]

APT30M40JVR

APT30M40JVR

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