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VS-RA160FA120

P1-P3P4-P6P7-P7
VS-RA160FA120
www.vishay.com
Vishay Semiconductors
Revision: 13-Apr-18
1
Document Number: 96330
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SOT-227 Power Module
Insulated Standard Recovery Rectifier, 160 A
FEATURES
• Two fully independent diodes
• Fully insulated package
• High voltage rectifiers optimized for very low
forward voltage drop
• Industry standard outline
• UL pending
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
These devices are intended for use in main rectification.
Single or three phase bridge.
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
per module
160 A, T
C
= 101 °C
V
FM
typical at 100 A
1.16 V
Type Modules - diode, high voltage
Package SOT-227
Circuit configuration Two separate diodes, parallel pin-out
SOT-227
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
90 °C 91
A
I
F(RMS)
138
I
FSM
50 Hz 940
60 Hz 985
I
2
t
50 Hz 4420
A
2
s
60 Hz 4015
I
2
t 44 180 A
2
s
V
RRM
1200 V
T
J
-55 to +150 °C
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
TYPICAL
AT 150 °C
mA
VS-RA160FA120 120 1200 1300 1.0
VS-RA160FA120
www.vishay.com
Vishay Semiconductors
Revision: 13-Apr-18
2
Document Number: 96330
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current at case
temperature per leg
I
F(AV)
180° conduction, half sine wave, 90 °C 91 A
Maximum RMS forward current per leg I
F(RMS)
DC at 101 °C case temperature 138
A
Maximum peak, one-cycle forward,
non-repetitive surge current per leg
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial
T
J
= T
J
maximum
940
t = 8.3 ms 985
t = 10 ms
100 % V
RRM
reapplied
790
t = 8.3 ms 825
Maximum I
2
t for fusing per leg I
2
t
t = 10 ms
No voltage
reapplied
4420
A
2
s
t = 8.3 ms 4015
t = 10 ms
100 % V
RRM
reapplied
3125
t = 8.3 ms 2840
Maximum I
2
t for fusing per leg I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 44 180 A
2
s
Low level of threshold voltage per leg V
F(TO)1
(16.7 % x x I
F(AV)
) < I < x I
F(AV)
, T
J
= T
J
maximum
0.80 V
Low level value of forward slope resistance r
f1
4.32 m
High level of threshold voltage per leg V
F(TO)2
(I > x I
F(AV)
), T
J
= T
J
maximum
0.93 V
High level value of forward slope resistance r
f2
4.14 m
Maximum forward voltage drop per leg V
FM
I
FM
= 100 A, T
J
= 25 °C 1.27
V
I
FM
= 100 A, T
J
= 150 °C 1.22
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse leakage current
per leg
I
RRM
T
J
= 25 °C 150 μA
T
J
= 150 °C 1.5 mA
RMS insulation voltage V
INS
T
J
= 25 °C, any terminal to case, t = 1 minute 2500 V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Thermal resistance,
junction to case
per leg
R
thJC
- - 0.26
°C/Wper module - - 0.13
Thermal resistance, case to heatsink per module R
thCS
-0.1-
Weight -30-g
Mounting torque to terminal - - 1.1 (9.7) Nm (lbf. in)
Mounting torque to heatsink - - 1.8 (15.9) Nm (lbf. in)
Case style SOT-227
R CONDUCTION PER JUNCTION
DEVICE
SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
°C/W
VS-RA160FA120 0.109 0.122 0.149 0.213 0.355 0.069 0.119 0.159 0.223 0.358
VS-RA160FA120
www.vishay.com
Vishay Semiconductors
Revision: 13-Apr-18
3
Document Number: 96330
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics (A)
Fig. 2 - Current Ratings Characteristics (A)
Fig. 3 - Current Ratings Characteristics (A)
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
0
20
40
60
80
100
120
140
160
0 25 50 75 100 125 150 175 200
Maximum Allowable Case Temperature
(°C)
Average Forward Current (A)
R
thJC(DC)
= 0.26 °C/W
180 °C
120 °C
90 °C
30 °C
60 °C
Conduction angle
Ø
0
20
40
60
80
100
120
140
160
0 50 100 150 200 250 300
DC
Maximum Allowable Case Temperature
(°C)
Average Forward Current (A)
180 °C
120 °C
90 °C
30 °C
60 °C
Conduction Period
Ø
R
thJC(DC)
= 0.2 °C/W
0
50
100
150
0255075100
Maximum Average Power Loss (W)
Average Forward Current (A)
120 °C
180 °C
60 °C
30 °C
90 °C
RMS limit
Conduction angle
Ø
Per leg, T
J
= 150 °C
0
50
100
150
200
0 20 40 60 80 100 120 140
DC
180 °C
120 °C
90 °C
30 °C
60 °C
Conduction Period
Ø
Per leg, T
J
= 150 °C
Maximum Average Power Loss (W)
Average Forward Current (A)
RMS limit
Maximum Average Power Loss (W)
Average Forward Current (A)
0
50
100
150
200
0 20406080100120140
DC
120 °C
180 °C
60 °C
30 °C
90 °C
Conduction Period
Ø
Per leg, T
J
= 150 °C
RMS limit
200
400
600
800
1000
110100
Peak Half-Sine Wave Forward Current (A)
Number of Equal Amplitute
Half-Cycle Current Pulses (N)
P1-P3P4-P6P7-P7

VS-RA160FA120

Mfr. #:
Buy VS-RA160FA120
Manufacturer:
Vishay Semiconductors
Description:
Discrete Semiconductor Modules 1200V, 160A, Pwr Mod Std Recvry Rectifier
Lifecycle:
New from this manufacturer.
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