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SI8409DB-T1-E1

P1-P3P4-P6P7-P9P10-P10
Si8409DB
www.vishay.com
Vishay Siliconix
S15-1692-Rev. D, 20-Jul-15
4
Document Number: 73111
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
- 0.2
- 0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
0.001
0
40
80
60
10
Time (s)
20
Power (W)
0.01 0.1 1 100 600
100
1
0.1 1 10 100
0.01
10
T
A
= 25 °C
Single Pulse
- Drain Current (A)I
D
P(t) = 10
DC
0.1
I
D(on)
Limited
Limited R
DS(on)
*
BVDSS Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
I
DM
Limited
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
10
-3
10
-2
00601110
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective
Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 72 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Si8409DB
www.vishay.com
Vishay Siliconix
S15-1692-Rev. D, 20-Jul-15
5
Document Number: 73111
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73111
.
10
-3
10
-2
1010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
Package Information
www.vishay.com
Vishay Siliconix
Revision: 27-Apr-15
1
Document Number: 69378
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MICRO FOOT
®
: 4-Bumps
(1.6 mm x 1.6 mm, 0.8 mm Pitch, 0.290 mm Bump Height)
Notes
1. Bumps are 95.5/3.8/0.7 Sn/Ag/Cu.
2. Backside surface is coated with a Ti/Ni/Ag layer.
3. Non-solder mask defined copper landing pad.
4. Laser marks on the silicon die back.
5. “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined.
6. • is the location of pin 1
Note
• Use millimeters as the primary measurement.
DIM.
MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 0.550 0.575 0.600 0.0217 0.0226 0.0236
A1 0.260 0.275 0.290 0.0102 0.0108 0.0114
A2 0.290 0.300 0.310 0.0114 0.0118 0.0122
b 0.370 0.390 0.410 0.0146 0.0153 0.0161
b1 0.300 0.0118
e 0.800 0.0314
s 0.360 0.380 0.400 0.0141 0.0150 0.0157
D 1.520 1.560 1.600 0.0598 0.0614 0.0630
E 1.520 1.560 1.600 0.0598 0.0614 0.0630
K 0.155 0.185 0.215 0.0061 0.0073 0.0085
ECN: T15-0175-Rev. A, 27-Apr-15
DWG: 6038
A2A1
A
4x Ø b1
D
E
S
e
S
SeS
Mark on backside of die
XXXX
G
S
D
D
XXX
Note 5
Recommended land pattern
e
e
4x 0.30 to .31
(Note 3)
Solder mask-0.4
b
K
b1
P1-P3P4-P6P7-P9P10-P10

SI8409DB-T1-E1

Mfr. #:
Buy SI8409DB-T1-E1
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6
Lifecycle:
New from this manufacturer.
Delivery:
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