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TK10P60W,RVQ

P1-P3P4-P6P7-P9P10-P10
TK10P60W
1
MOSFETs Silicon N-Channel MOS (DTMOS)
TK10P60W
TK10P60W
TK10P60W
TK10P60W
Start of commercial production
2012-09
1.
1.
1.
1. Applications
Applications
Applications
Applications
• Switching Voltage Regulators
2.
2.
2.
2. Features
Features
Features
Features
(1) Low drain-source on-resistance: R
DS(ON)
= 0.327 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: V
th
= 2.7 to 3.7 V (V
DS
= 10 V, I
D
= 0.5 mA)
3.
3.
3.
3. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
DPAK
1: Gate
2: Drain (Heatsink)
3: Source
2014-09-17
Rev.4.0
TK10P60W
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
(T
c
= 25)
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
I
DR
I
DRP
T
ch
T
stg
Rating
600
±30
9.7
38.8
80
121
2.5
9.7
38.8
150
-55 to 150
Unit
V
A
W
mJ
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5.
5.
5.
5. Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Symbol
R
th(ch-c)
Max
1.57
Unit
/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: V
DD
= 90 V, T
ch
= 25 (initial), L = 33.9 mH, R
G
= 25 Ω, I
AR
= 2.5 A
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2014-09-17
Rev.4.0
TK10P60W
3
6.
6.
6.
6. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
6.1.
6.1.
6.1.
6.1. Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
th
R
DS(ON)
Test Condition
V
GS
= ±30 V, V
DS
= 0 V
V
DS
= 600 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 0.5 mA
V
GS
= 10 V, I
D
= 4.9 A
Min
600
2.7
Typ.
0.327
Max
±1
10
3.7
0.43
Unit
µA
V
Ω
6.2.
6.2.
6.2.
6.2. Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Effective output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
MOSFET dv/dt ruggedness
Symbol
C
iss
C
rss
C
oss
C
o(er)
r
g
t
r
t
on
t
f
t
off
dv/dt
Test Condition
V
DS
= 300 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 0 to 400 V, V
GS
= 0 V
V
DS
= OPEN, f = 1 MHz
See Figure 6.2.1
V
DD
= 0 to 400 V, I
D
= 4.9 A
Min
50
Typ.
700
2.3
20
35
7.5
22
45
5.5
75
Max
Unit
pF
Ω
ns
V/ns
Fig.
Fig.
Fig.
Fig. 6.2.1
6.2.1
6.2.1
6.2.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
6.3.
6.3.
6.3.
6.3. Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Q
g
Q
gs1
Q
gd
Test Condition
V
DD
≈ 400 V, V
GS
= 10 V, I
D
= 9.7 A
Min
Typ.
20
4.5
9.5
Max
Unit
nC
6.4.
6.4.
6.4.
6.4. Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Diode dv/dt ruggedness
Symbol
V
DSF
t
rr
Q
rr
I
rr
dv/dt
Test Condition
I
DR
= 9.7 A, V
GS
= 0 V
I
DR
= 4.9 A, V
GS
= 0 V
-dI
DR
/dt = 100 A/µs
I
DR
= 4.9 A, V
GS
= 0 V, V
DD
= 400 V
Min
15
Typ.
250
2.2
19
Max
-1.7
Unit
V
ns
µC
A
V/ns
2014-09-17
Rev.4.0
P1-P3P4-P6P7-P9P10-P10

TK10P60W,RVQ

Mfr. #:
Buy TK10P60W,RVQ
Manufacturer:
Toshiba
Description:
MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC
Lifecycle:
New from this manufacturer.
Delivery:
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