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Document Number: 67049
S11-0598-Rev. B, 25-Apr-11
Vishay Siliconix
DG9236
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. V
IN
= input voltage to perform proper function.
b. Room = 25 ºC, Full = as determined by the operating temperature.
c. Typical value are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (for 3 V Supply)
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, V
A0, A1
= 1.4 V, 0.5 V
a
Temp.
b
Typ.
c
- 40 °C to + 85 °C
Unit Min.
d
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full 3 V
On-Resistance R
DS(ON)
I
S
= 1 mA, V
D
= + 1.5 V
Room
Full
732 795
810
On-Resistance Match R
ON
I
S
= 1 mA, V
D
= + 1.5 V
Room
Full
516
17
Switch Off
Leakage Current
(for 16 pin miniQFN)
I
S(off)
V+ = 3.3 V, V- = 0 V
V
D
= 1 V/3 V, V
S
= 3 V/1 V
Room
Full
± 0.01 - 1
- 1.2
1
1.2
nA
I
D(off)
Room
Full
± 0.01 - 1
- 1.2
1
1.2
Channel On
Leakage Current
(for 16 pin miniQFN)
I
D(on)
V+ = 3.3 V, V- = 0 V,
V
S
= V
D
= 1 V/3 V
Room
Full
± 0.01 - 1
- 1.2
1
1.2
Digital Control
Input Current, V
IN
Low I
L
V
AX
= 0.5 V Full 0.005 - 0.1 0.1
µA
Input Current, V
IN
High I
H
V
AX
= 1.4 V Full 0.005 - 0.1 0.1
Input Capacitance C
IN
f = 1 MHz Room 3.1 pF
Dynamic Characteristics
Enable Turn-On Time t
ON
R
L
= 300 , C
L
= 35 pF
see figure 1, 2
Room
Full
30 150
170
nsEnable Turn-Off Time t
OFF
Room
Full
20 110
120
Break-Before-Make-Time t
BMM
Room
Full
19
25
5
1
not
limit
Charge Injection
e
Q
INJ
C
L
= 1 nF, R
GEN
= 0 , V
GEN
= 0 V Full 1 pC
Off-Isolation
e
OIRR
f
= 10 MHz, R
L
= 50 , C
L
= 5 pF
Room - 63
dB
Crosstalk
e
X
TAL K
Room - 70
Bandwidth
e
BW R
L
= 50 Room 183 MHz
Total Harmonic Distortion
e
THD
Signal = 1 V
RMS,
20 Hz to 20 kHz,
R
L
= 600
Room 5.5 %
Source Off Capacitance
e
C
S(off)
f = 1 MHz Room
2.1
pF
Channel On Capacitance
e
C
D(on)
8.3
Power Supplies
Power Supply Current I+
V
IN
= 0 V, or V+
Room
Full
0.001 0.5
1
µA
Ground Current I
GND
Room
Full
- 0.001 - 0.5
- 1
