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6-534257-5

P1-P3P4-P6P7-P9P10-P10
Vishay Siliconix
Si3495DV
Document Number: 73135
S09-2110-Rev. C, 12-Oct-09
www.vishay.com
1
P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET: 1.5 V Rated
• Ultra-Low On-Resistance
• 100 % R
g
Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch and PA Switch for Portable Devices
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 20
0.024 at V
GS
= - 4.5 V
- 7
0.030 at V
GS
= - 2.5 V
- 6.2
0.038 at V
GS
= - 1.8 V
- 5.2
0.048 at V
GS
= - 1.5 V
- 5.0
TSOP-6
Top V iew
6
4
1
2
3
5
2.85 mm
3 mm
Ordering Information:
Si3495DV-T1-E3 (Lead (Pb)-free)
Si3495DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code: 95xxx
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
Note:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
- 20
V
Gate-Source Voltage
V
GS
± 5
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 7 - 5.3
A
T
A
= 85 °C
- 3.6 - 3.9
Pulsed Drain Current
I
DM
- 20
Continuous Source Current (Diode Conduction)
a
I
S
- 1.7 - 0.9
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
2.0 1.1
W
T
A
= 85 °C
1.0 0.6
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 5 s
R
thJA
45 62.5
°C/W
Steady State 90 110
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
25 30
www.vishay.com
2
Document Number: 73135
S09-2110-Rev. C, 12-Oct-09
Vishay Siliconix
Si3495DV
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 0.35 - 0.75 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 5 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
- 1
µA
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 85 °C
- 10
On-State Drain Current
a
I
D(on)
V
DS
= - 5 V, V
GS
= - 4.5 V
- 20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 7 A
0.020 0.024
Ω
V
GS
= - 2.5 V, I
D
= - 6.2 A
0.024 0.030
V
GS
= - 1.8 V, I
D
= - 5.2 A
0.030 0.038
V
GS
= - 1.5 V, I
D
= - 3 A
0.036 0.048
Forward Transconductance
a
g
fs
V
DS
= - 5 V, I
D
= - 7 A
25 S
Diode Forward Voltage
a
V
SD
I
S
= - 1.7 A, V
GS
= 0 V
- 0.62 - 1.1 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 7 A
25 38
nCGate-Source Charge
Q
gs
2.5
Gate-Drain Charge
Q
gd
7
Gate Resistance
R
g
48.513Ω
Tur n-O n Delay T i me
t
d(on)
V
DD
= - 10 V, R
L
= 10 Ω
I
D
≅ - 1 A, V
GEN
= - 4.5 V, R
g
= 6 Ω
19 30
ns
Rise Time
t
r
36 55
Turn-Off Delay Time
t
d(off)
200 300
Fall Time
t
f
106 160
Source-Drain Reverse Recovery Time
t
rr
I
F
= - 1.7 A, dI/dt = 100 A/µs
35 60
Output Characteristics
0
4
8
12
16
20
012345
V
GS
= 5 V thru 2 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
1 V
1.5 V
Transfer Characteristics
0
4
8
12
16
20
0.0 0.4 0.8 1.2 1.6 2.0
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
Document Number: 73135
S09-2110-Rev. C, 12-Oct-09
www.vishay.com
3
Vishay Siliconix
Si3495DV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
- On-Resistance (Ω)R
DS(on)
0.00
0.02
0.04
0.06
0.08
0.10
048121620
I
D
- Drain Current (A)
V
GS
= 1.5 V
V
GS
= 2.5 V
V
GS
= 4.5 V
V
GS
= 1.8 V
0
1
2
3
4
5
6
0 4 8 12 16 20 24 28 32
V
DS
= 10 V
I
D
= 7 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
20
10
0.1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 150 °C
T
J
= 25 °C
1
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
500
1000
1500
2000
2500
3000
3500
048121620
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.8
1.4
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 7 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
0.00
0.02
0.04
0.06
0.08
0.10
012345
I
D
= 7 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
P1-P3P4-P6P7-P9P10-P10

6-534257-5

Mfr. #:
Buy 6-534257-5
Manufacturer:
TE Connectivity / AMP Connectors
Description:
Headers & Wire Housings 50 MODII 2PC SHRD HDR W/HLDWN ROHS
Lifecycle:
New from this manufacturer.
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