DMP4047SSD
Document Number DS36353 Rev. 3 - 2
2 of 5
www.diodes.com
September 2013
© Diodes Incorporated
DMP4047SSD
NEW PRODUCT NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-40 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 7) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-5.1
-4.1
A
t < 10s
T
A
= +25°C
T
A
= +70°C
I
D
-6.5
-5.2
A
Continuous Drain Current (Note 7) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-4.6
-3.7
A
t < 10s
T
A
= +25°C
T
A
= +70°C
I
D
-5.9
-4.7
A
Maximum Body Diode Continuous Current
I
S
-2.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
-40 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.3
W
T
A
= +70°C
0.8
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
98
°C/W
t < 10s 59
Total Power Dissipation (Note 7)
T
A
= +25°C
P
D
1.8
W
T
A
= +70°C
1.1
Thermal Resistance, Junction to Ambient (Note 7)
Steady state
R
θJA
71
°C/W
t < 10s 43
Thermal Resistance, Junction to Case (Note 7)
R
θJC
11.8
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-40
V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
-1 µA
V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage
I
GSS
±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS
th
-1.0
-3.0 V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS (ON)
33 45
mΩ
V
GS
= -10V, I
D
= -4.4A
40 55
V
GS
= -4.5V, I
D
= -3.7A
Diode Forward Voltage
V
SD
-0.75 -1.2 V
V
GS
= 0V, I
S
= -3.9A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance Ciss
1154
pF
V
DS
= -20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance Coss
84
pF
Reverse Transfer Capacitance Crss
66
pF
Gate Resistance RG
12.6
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V)
Qg
10.6
nC
V
DS
= -20V, I
D
= -4.9A
Total Gate Charge (V
GS
= -10V)
Qg
21.5
nC
Gate-Source Charge Qgs
2.2
nC
Gate-Drain Charge Qgd
3.3
nC
Turn-On Delay Time tD(on)
8.7
ns
V
DS
= -20V, I
D
= -3.9A
V
GS
= 4.5V, R
G
= 1Ω
Turn-On Rise Time tr
19.6
ns
Turn-Off Delay Time tD(off)
34.9
ns
Turn-Off Fall Time tf
25.5
ns
Body Diode Reverse Recovery Time trr
9.61
ns
I
F
= -3.9A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr
3.3
nC
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
