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ZX5T3ZTC

P1-P3P4-P6P7-P7
ZX5T3Z
Da
tasheet Number: DS33419 Rev. 2 - 2
1 of 7
www.diodes.com
May 2013
© Diodes Incorporated
ZX5T3Z
A
Product Line o
f
Diodes Incorporated
40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Features
BV
CEO
> -40V
I
C
= -5.5A High Continuous Current
I
CM
= -15A Peak Pulse Current
R
CE(SAT)
= 29mΩ for a low equivalent On-Resistance
Low Saturation Voltage V
CE(SAT)
< -60mV @ -1A
h
FE
Specified Up to -10A for High Current Gain Hold Up
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Mechanical Data
Case: SOT89
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.05 grams (Approximate)
Applications
Charging Circuits
DC-DC Converters
MOSFET and IGBT Gate Driving
Power Switches
Motor Control
Ordering Information (Note 5)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
ZX5T3ZTA AEC-Q101 53Z 7 12 1,000
ZX5T3ZQTA Automotive 53Z 7 12 1,000
ZX5T3ZTC AEC-Q101 53Z 13 12 4,000
ZX5T3ZQTC Automotive 53Z 13 12 4,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
53Z = Product Type Marking Code
Top View
Device Symbol
Top View
Pin Out
SOT89
C
E
C
B
C
E
B
789
Green
53Z
ZX5T3Z
Da
tasheet Number: DS33419 Rev. 2 - 2
2 of 7
www.diodes.com
May 2013
© Diodes Incorporated
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Diodes Incorporated
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Limit Unit
Collector-Base Voltage
V
CBO
-50 V
Collector-Base Voltage
V
CBS
-50 V
Collector-Emitter Voltage
V
CEO
-40 V
Emitter-Base Voltage
V
EBO
-7.5 V
Continuous Collector Current
I
C
-5.5 A
Peak Pulse Current
I
CM
-15 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 6)
P
D
0.9
W
(Note 7) 1.5
(Note 8) 2.1
(Note 9) 3.0
Thermal Resistance, Junction to Ambient Air
(Note 6)
R
θJA
139
C/W
(Note 7) 83
(Note 8) 60
(Note 9) 42
Thermal Resistance, Junction to Lead (Note 10)
R
θJL
2.81
C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
C
ESD Ratings (Note 11)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM ≥ 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 6. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as note (6), except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as note (6), except the device is mounted on 50mm x 50mm 1oz copper.
9. Same as note (6), except the device is mounted on 25mm x 25mm 1oz copper and measured at t<5secs.
10. Thermal resistance from junction to solder-point (on the exposed collector pad).
11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZX5T3Z
Da
tasheet Number: DS33419 Rev. 2 - 2
3 of 7
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Diodes Incorporated
Thermal Characteristics and Derating Information
100m 1 10
10m
100m
1
10
Single Pulse. T
amb
=25°C
25mmX25mm 1oz Cu
V
CE(sat)
Limit
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-I
C
Collector Current (A)
-V
CE
Collector-Emitter Voltage (V)
0 20406080100120140160
0.0
0.5
1.0
1.5
2.0
15mmX15mm 1oz Cu
25mmX25mm 1oz Cu
50mmX50mm 1oz Cu
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
25mmX25mm 1oz Cu
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse. T
amb
=25°C
25mmX25mm 1oz Cu
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
P1-P3P4-P6P7-P7

ZX5T3ZTC

Mfr. #:
Buy ZX5T3ZTC
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP 40V HI GAIN LOW SATURATION
Lifecycle:
New from this manufacturer.
Delivery:
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