APTM100DA18TG Datasheet APTM100DA18TG | P1-P3

APTM100DA18TG

APTM100DA18TG– Rev 3 October, 2012

www.microsemi.com

1

–

7

CR1

VBUS

NTC2

0/VBUS

VBUS SENSE

G2

S2

NTC1

Q2

OUT

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

See application note

APT0502 on www.microsemi.com

Symbol Parameter Max ratings Unit

V

DSS

Drain - Source Breakdown Voltage 1000 V

T

c

= 25°C 43

I

D

Continuous Drain Current

T

c

= 80°C 33

I

DM

Pulsed Drain current 172

A

V

GS

Gate - Source Voltage ±30 V

R

DSon

Drain - Source ON Resistance 210

m

P

D

Maximum Power Dissipation T

c

= 25°C 780 W

I

AR

Avalanche current (repetitive and non repetitive) 25 A

E

AR

Repetitive Avalanche Energy 50

E

AS

Single Pulse Avalanche Energy 3000

mJ

V

DSS

= 1000V

R

DSon

= 180m typ @ Tj = 25°C

I

D

= 43A @ Tc = 25°C

Application

 AC and DC motor control

 Switched Mode Power Supplies

 Power Factor Correction

Features

 Power MOS 7

®

MOSFETs

- Low R

DSon

- Low input and Miller capacitance

- Low gate charge

- Avalanche energy rated

- Very rugged

 Kelvin source for easy drive

 Very low stray inductance

- Symmetrical design

- Lead frames for power connections

 Internal thermistor for temperature monitoring

 High level of integration

Benefits

 Outstanding performance at high frequency operation

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Solderable terminals both for power and signal for

easy PCB mounting

 Low profile

 RoHS Compliant

Boost chopper

MOSFET Power Module

APTM100DA18TG

APTM100DA18TG– Rev 3 October, 2012

www.microsemi.com

2

–

7

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

GS

= 0V,V

DS

= 1000V T

j

= 25°C

200

I

DSS

Zero Gate Voltage Drain Current

V

GS

= 0V,V

DS

= 800V T

j

= 125°C

1000

µA

R

DS(on)

Drain – Source on Resistance V

GS

= 10V, I

D

= 21.5A

180 210

m

V

GS(th)

Gate Threshold Voltage V

GS

= V

DS

, I

D

= 5mA 3 5 V

I

GSS

Gate – Source Leakage Current V

GS

= ±30 V, V

DS

= 0V ±150 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

iss

Input Capacitance 10.4

C

oss

Output Capacitance 1.76

C

rss

Reverse Transfer Capacitance

V

GS

= 0V

V

DS

= 25V

f = 1MHz

0.32

nF

Q

g

Total gate Charge 372

Q

gs

Gate – Source Charge 48

Q

gd

Gate – Drain Charge

V

GS

= 10V

V

Bus

= 500V

I

D

= 43A

244

nC

T

d(on)

Turn-on Delay Time 18

T

r

Rise Time 12

T

d(off)

Turn-off Delay Time 155

T

f

Fall Time

Inductive switching @ 125°C

V

GS

= 15V

V

Bus

= 670V

I

D

= 43A

R

G

= 2.5

40

ns

E

on

Turn-on Switching Energy 1800

E

off

Turn-off Switching Energy

Inductive switching @ 25°C

V

GS

= 15V, V

Bus

= 670V

I

D

= 43A,

R

G

= 2.5Ω

1246

µJ

E

on

Turn-on Switching Energy 2846

E

off

Turn-off Switching Energy

Inductive switching @ 125°C

V

GS

= 15V, V

Bus

= 670V

I

D

= 43A,

R

G

= 2.5Ω

1558

µJ

Chopper diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Maximum Peak Repetitive Reverse Voltage

1000 V

T

j

= 25°C 250

I

RM

Maximum Reverse Leakage Current V

R

=1000V

T

j

= 125°C 500

µA

I

F

DC Forward Current

T

c

= 100°C

60 A

I

F

= 60A 1.9 2.5

I

F

= 120A

2.2

V

F

Diode Forward Voltage

I

F

= 60A T

j

= 125°C

1.7

V

T

j

= 25°C 280

t

rr

Reverse Recovery Time

T

j

= 125°C 350

ns

T

j

= 25°C 760

Q

rr

Reverse Recovery Charge

I

F

= 60A

V

R

= 670V

di/dt = 200A/µs

T

j

= 125°C 3600

nC

APTM100DA18TG

APTM100DA18TG– Rev 3 October, 2012

www.microsemi.com

3

–

7

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

Transistor

0.16

R

thJC

Junction to Case Thermal Resistance

Diode

0.9

°C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

4000 V

T

J

Operating junction temperature range

-40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

Torque Mounting torque To Heatsink M5 2.5 4.7 N.m

Wt Package Weight 160 g

Temperature sensor NTC

(see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R

25

Resistance @ 25°C 50

k

B

25/85

T

25

= 298.15 K 3952

K





























TT

B

R

T

11

exp

25

85/25

25

SP4 Package outline

(dimensions in mm)

ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :

See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com

T: Thermistor temperature

R

T

: Thermistor value at T

APTM100DA18TG

APTM100DA18TG

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