March 2007 Rev 1 1/11
STTH8R04
Ultrafast recovery diode
Main product characteristics
Features and benefits
Very low switching losses
High frequency and high pulsed current
operation
High junction temperature
Insulated packages
TO-220AC Ins
Electrical insulation = 2500 V
RMS
Capacitance = 7 pF
TO-220FPAC
Electrical insulation = 1500 V
RMS
Capacitance = 12 pF
Description
The STTH8R04 series uses ST's new 400 V
planar Pt doping technology. The STTH8R04 is
specially suited for switching mode base drive and
transistor circuits.
Packaged in through-the-hole and surface mount
packages, this device is intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection.
Order codes
I
F(AV)
8 A
V
RRM
400 V
T
j (max)
175° C
V
F (typ)
0.9 V
t
rr (typ)
25 ns
Part Number Marking
STTH8R04D STTH8R04D
STTH8R04DI STTH8R04DI
STTH8R04FP STTH8R04FP
STTH8R04G STTH8R04G
STTH8R04G-TR STTH8R04G
KA
K
K
A
K
A
K
A
NC
K
A
TO-220AC
STTH8R04D
TO-220FPAC
STTH8R04FP
D
2
PAK
STTH8R04G
TO-220AC Ins
STTH8R04DI
www.st.com
Characteristics STTH8R04
2/11
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.83 x I
F(AV)
+ 0.034 x I
F
2
(RMS)
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 400 V
V
RSM
Repetitive peak reverse voltage 400 V
I
F(RMS)
RMS forward current
TO-220AC / D
2
PAK / TO220FPAC 30
A
TO220AC Ins 20
I
F(AV)
Average forward current, δ = 0.5
TO-220AC / D
2
PA K T
c
= 145° C
8ATO220FPAC T
c
= 110° C
TO220AC Ins T
c
= 115° C
I
FRM
Repetitive peak forward current t
p
= 10 µs, F = 1 kHz 165 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 120 A
T
stg
Storage temperature range -65 to +175 ° C
T
j
Operating junction temperature range -40 to +175 ° C
Table 2. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220AC / D
2
PA K 2. 5
°C/WTO220FPAC 6
TO220AB Ins 5.5
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
10
µA
T
j
= 125° C 10 100
V
F
(2)
Forward voltage drop
T
j
= 25° C
I
F
= 8 A
1.5
VT
j
= 100° C 1.05 1.3
T
j
= 150° C 0.9 1.1
1. Pulse test: t
p
= 5 ms, δ < 2 %
2. Pulse test: t
p
= 380 µs, δ < 2 %
STTH8R04 Characteristics
3/11
Table 4. Dynamic characteristics
Symbol Parameter
Test conditions
Min Typ Max Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25° C
35 50
ns
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25° C
25 35
I
RM
Reverse recovery current
I
F
= 8 A, dI
F
/dt = -200 A/µs,
V
R
= 320 V, T
j
= 125° C
5.5 8 A
S Softness factor
I
F
= 8 A, dI
F
/dt = -200 A/µs,
V
R
= 320 V, T
j
= 125° C
0.4
t
fr
Forward recovery time
I
F
= 8 A, dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25° C
150 ns
V
FP
Forward recovery voltage
I
F
= 8 A, dI
F
/dt = 100 A/µs
2.9 V
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus
forward current
0
1
2
3
4
5
6
7
8
9
10
11
12
13
01234567891011
P(W)
δ=0.05
δ=0.1 δ=0.2
δ=0.5
δ=1
T
δ
=tp/T
tp
I
F(AV)
(A)
0
20
40
60
80
100
120
140
160
180
200
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
I
FM
(A)
T
J
=150°C
(Maximum values)
T
J
=150°C
(Maximum values)
T
J
=150°C
(Typical values)
T
J
=150°C
(Typical values)
T
J
=25°C
(Maximum values)
T
J
=25°C
(Maximum values)
V
FM
(V)
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration TO-220FPAB
0.1
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Zth
(j-c)
/Rth
(j-c)
Single pulse
TO-220AC
TO-220AC Ins
D²PAK
tp(s)
0.0
0.1
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Zth
(j-c)
/Rth
(j-c)
Single pulse
TO-220FPAB
tp(s)

STTH8R04DI

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Rectifiers Recovery Diode Ultra Fast
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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