V
RRM
= 100 V - 600 V
I
F
= 70 A
Features
• High Surge Capability DO-5 Package
• Types up to 600 V V
RRM
Parameter Symbol FR70B(R)02 FR70D(R)02 FR70G(R)02 Unit
Re
etitive
eak reverse
FR70J(R)02
FR70B02 thru FR70JR02
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
Silicon Fast
Recover
Diode
voltage
RRM
RMS reverse voltage
V
RMS
70 140 280 V
DC blocking voltage
V
DC
100 200 400 V
Continuous forward current
I
F
70 70 70 A
Operating temperature
T
j
-40 to 125 -40 to 125 -40 to 125 °C
Storage temperature
T
stg
-40 to 150 -40 to 150 -40 to 150 °C
Parameter Symbol FR70B(R)02 FR70D(R)02 FR70G(R)02 Unit
Diode forward voltage 1.5 1.5 1.5
25 25 25 μA
15 15 15 mA
Recovery Time
Maximum reverse recovery
time
T
RR
200 200 200 nS
Thermal characteristics
Thermal resistance, junction
- case
R
thJC
0.8 0.8 0.8 °C/W
1.5
420
600
70
870
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
R
= 100 V, T
j
= 125 °
V
25
15
250
0.8
A870
-40 to 125
-40 to 150
FR70J(R)02
V
R
= 100 V, T
j
= 25 °C
I
F
= 70 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
870 870
T
C
= 25 °C, t
p
= 8.3 ms
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
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