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BC856AW-7-F

P1-P3P4-P5
BC856AW – BC858CW
Document Number: DS30251 Rev. 10 - 2
1 of 5
www.diodes.com
November 2013
© Diodes Incorporated
BC856AW-BC858CW
PNP SMALL SIGNAL TRANSISTOR IN SOT323
Features
Ideally Suited for Automatic Insertion
Complementary NPN Types Available (BC846AW – BC848CW)
For switching and AF Amplifier Applications
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Mechanical Data
Case: SOT323
Case material: molded plastic, “Green” molding compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
Ordering Information (Notes 4 & 5)
Product Compliance Marking
Reel Size
(inches)
Quantity
per Reel
Product Compliance Marking
Reel Size
(inches)
Quantity
per Reel
BC856AW-7-F AEC-Q101 K3A 7 3,000 BC857BWQ-13-F Automotive K3B 13 10,000
BC856BW-7-F AEC-Q101 K3B 7 3,000 BC857CW-7-F AEC-Q101 K3G 7 3,000
BC856BW-13-F AEC-Q101 K3B 13 10,000 BC858AW-7-F AEC-Q101 K3A 7 3,000
BC857AW-7-F AEC-Q101 K3A 7 3,000 BC858BW-7-F AEC-Q101 K3B 7 3,000
BC857BW-7-F AEC-Q101 K3B 7 3,000 BC858CW-7-F AEC-Q101 K3G 7 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. Tape width is 8mm. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul
Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7
8 9 O N D
Top View
SOT323
Device Symbol
Top View
Pin-Out
C
E
B
xxx
YM
xxx = Product Type Marking Code (See Ordering Information)
YM = Date Code Marking
Y or Y = Year (ex: A = 2013)
M or M = Month (ex: 9 = September)
BC856AW – BC858CW
Document Number: DS30251 Rev. 10 - 2
2 of 5
www.diodes.com
November 2013
© Diodes Incorporated
BC856AW-BC858CW
Absolute Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
BC856
V
CBO
-80
V
BC857 -50
BC858 -30
Collector-Emitter Voltage
BC856
V
CEO
-65
V
BC857 -45
BC858 -30
Emitter-Base Voltage
V
EBO
-5.0 V
Continuous Collector Current
I
C
-100 mA
Peak Collector Current
I
CM
-200 mA
Peak Emitter Current
I
EM
-200 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
P
D
200 mW
Thermal Resistance, Junction to Ambient (Note 6)
R
θJA
625
C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BC856
BV
CBO
-80
- - V
I
C
= -100nA
BC857 -50
BC858 -30
Collector-Emitter Breakdown Voltage (Note 7)
BC856
BV
CEO
-65
- - V
I
C
= -10mA
BC857 -45
BC858 -30
Emitter-Base Breakdown Voltage
BV
EBO
-5 - - V
I
E
= -100nA
DC Current Gain (Note 7) Current Gain Group
A
h
FE
125 180 250
-
V
CE
= -5.0V, I
C
= -2.0mA
B 220 290 475
C 420 520 800
Collector Cutoff Current
I
CBO
- -
-15 nA
V
CB
= -30V
-4 µA
V
CB
= -30V, T
A
= +150°C
Collector-Emitter Saturation Voltage (Note 7)
V
CE(sat)
-
-75 -300
mV
I
C
= -10mA, I
B
= -0.5mA
-250 -650
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Turn-On Voltage (Note 7)
V
BE(on)
-600 -650 -750
mV
I
C
= -2mA, V
CE
= -5V
- - -820
I
C
= -10mA, V
CE
= -5V
Base-Emitter Saturation Voltage (Note 7)
V
BE(sat)
-
-700 -
mV
I
C
= -10mA, I
B
= -0.5mA
-850 -950
I
C
= -100mA, I
B
= -5mA
Output Capacitance
C
obo
- 3 4.5 pF
V
CB
= -10V, f = 1.0MHz
Transition Frequency
f
T
100 200 - MHz
V
CE
= -5V, I
C
= -10mA,
f = 100MHz
Noise Figure NF - - 10 dB
V
CE
= -5V, I
C
= -200µA
R
S
= 2kΩ, f = 1kHz
∆f = 200Hz
Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
BC856AW – BC858CW
Document Number: DS30251 Rev. 10 - 2
3 of 5
www.diodes.com
November 2013
© Diodes Incorporated
BC856AW-BC858CW
Typical Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
0
50
100
25 50
75
100 125
150
175
200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Note 5)
A
150
200
250
0
R°C/W
JA
= 625
1
0.1 10
100
1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
I
I
C
B
= 10
1
10
100
1,000
110100
1,000
V = 5V
CE
h,
D
C
C
U
R
R
E
N
T
G
A
I
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain (Group B)
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
10
100
1,000
1
10
100
f,
G
AI
N
-BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
t
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Gain-Bandwidth Product vs. Collector Current
C
V = 5V
CE
P1-P3P4-P5

BC856AW-7-F

Mfr. #:
Buy BC856AW-7-F
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP BIPOLAR
Lifecycle:
New from this manufacturer.
Delivery:
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