PD -2.455 rev. B 03/99
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of
Recovery Parameters
Features
Description
HEXFRED
TM
diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are
ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
Ultrafast, Soft Recovery DiodeHEXFRED
TM
HFA135NH40R
HALF-PAK
da
BASE ANODE
LUG
TERMINAL
CATHODE
V
R
= 400V
V
F
(typ.) = 1V
I
F(AV)
= 135A
Q
rr
(typ.) = 290nC
I
RRM
(typ.)
= 7.5A
t
rr
(typ.)
= 50ns
di
(rec)M
/dt (typ.) = 270A/µs
Thermal - Mechanical Characteristics
Absolute Maximum Ratings (per Leg)
lbfin
(Nm)
°C/W
K/W
Parameter Min. Typ. Max. Units
R
thJC
Junction-to-Case 0.33
R
thCS
Case-to-Sink, Flat, Greased Surface 0.15
Wt Weight 26 (0.9) g (oz)
Mounting Torque 15 (1.7) 25 (2.8)
Terminal Torque 30 (3.4) 40 (4.6)
Vertical Pull 80
2 inch Lever Pull 40
Parameter Max. Units
V
R
Cathode-to-Anode Voltage 400 V
I
F
@ T
C
= 25°C Continuous Forward Current 211
I
F
@ T
C
= 100°C Continuous Forward Current 103
I
FSM
Single Pulse Forward Current 900
E
AS
Non-Repetitive Avalanche Energy 1.4 mJ
P
D
@ T
C
= 25°C Maximum Power Dissipation 379
P
D
@ T
C
= 100°C Maximum Power Dissipation 152
T
J
Operating Junction and
T
STG
Storage Temperature Range
-55 to +150
W
A
°C
lbfin
Note: Limited by junction temperature Mounting surface must be smooth, flat, free or burrs or other
L = 100µH, duty cycle limited by max T
J
protrusions. Apply a thin even film or thermal grease to mounting
125°C surface. Gradually tighten each mounting bolt in 5-10 lbfin steps
until desired or maximum torque limits are reached. Module
1
