4.2 Operating Parameters
Note: Within the operating range the IC operates as described in the functional description. Unless
otherwise noted all parameters refer to GND1.
Table 3 Operating Parameters
Parameter Symbol Values Unit Note or
Test Condition
Min. Max.
Power supply output side V
VCC2
13 18 V
6)
Power supply input side V
VCC1
3.1 17 V
Logic input voltages (IN+,IN-) V
LogicIN
-0.3 17 V
Pin CLAMP voltage V
CLAMP
V
GND2
-0.3 V
VCC2
7)
V
6)
Switching frequency f
sw
1.0 MHz
8)9)
Ambient temperature T
A
-40 125 °C
Thermal coeicient, junction-top Ψ
th,jt
4.8 K/W
9)
@T
A
= 85°C
Common mode transient immunity |dV
ISO
/dt| 100 kV/μs
9)
@ 1000 V
4.3 Electrical Characteristics
Note: The electrical characteristics include the spread of values in supply voltages, load and junction
temperatures given below. Typical values represent the median values at T
A
= 25°C. Unless otherwise
noted all voltages are given with respect to their respective GND (GND1 for pins 1 to 3, GND2 for pins 6
to 8).
4.3.1 Voltage Supply
Table 4 Voltage Supply
Parameter Symbol Values Unit Note or Test
Condition
Min. Typ. Max.
UVLO threshold input chip V
UVLOH1
2.85 3.1 V
V
UVLOL1
2.55 2.75 V
UVLO hysteresis input chip
(V
UVLOH1
- V
UVLOL1
)
V
HYS1
0.09 0.10 V
6
With respect to GND2.
7
May be exceeded during short circuit clamping.
8
do not exceed max. power dissipation
9
Parameter is not subject to production test - verified by design/characterization
EiceDRIVER
1EDI Compact
Single channel IGBT gate driver IC with clamp in wide body package
Electrical Parameters
Datasheet 10 Rev. 2.0
2016-07-05
Table 4 Voltage Supply (Continued)
Parameter Symbol Values Unit Note or Test
Condition
Min. Typ. Max.
UVLO threshold output chip (IGBT
supply)
V
UVLOH2
11.9 12.7 V
10)
V
UVLOL2
10.5 11.0 V
10)
UVLO hysteresis output chip
(V
UVLOH1
- V
UVLOL1
)
V
HYS2
0.7 0.85 V
Quiescent current input chip I
Q1
0.6 1 mA V
VCC1
= 5 V
IN+ = High, IN- = Low
=>OUT = High
Quiescent current output chip I
Q2
1.2 2 mA V
VCC2
= 15 V
IN+ = High, IN- = Low
=>OUT = High
4.3.2 Logic Input
UVLO
No driver
operation
5
10
15
V
VCC1
V
IN+L
,V
IN-L
V
IN+H
,V
IN-H
5
10
V
VCC1,max
0.7×5V
0.3×5V
0.7×15V
0.3×15V
3.3
IN+, IN- Low Input Voltage, max
0.3×3.3V
IN+,IN- High Input Voltage, min
0.7×3.3V
Figure 6 VCC1 scaled input threshold voltage of IN+ and IN-
Beginning from the input undervoltage lockout level, threshold levels for IN+ and IN- are scaled to V
VCC1
. The
high input threshold is 70% of V
VCC1
and the low input threshold is at 30% of V
VCC1
.
10
With respect to GND2.
EiceDRIVER
1EDI Compact
Single channel IGBT gate driver IC with clamp in wide body package
Electrical Parameters
Datasheet 11 Rev. 2.0
2016-07-05
Table 5 Logic Input
Parameter Symbol Values Unit Note or Test
Condition
Min. Typ. Max.
IN+,IN- low input voltage V
IN+L
,
V
IN-L
0.3 ×
V
VCC1
11)
3.1 V ≤ V
VCC1
≤ 17 V
IN+,IN- high input voltage V
IN+H
,
V
IN-H
0.7 ×
V
VCC1
IN+,IN- low input voltage V
IN+L
,
V
IN-L
1.5 V V
VCC1
= 5.0 V
IN+,IN- high input voltage V
IN+H
,
V
IN-H
3.5 V
IN- input current I
IN-
70 200 μA V
VCC1
= 5.0 V, V
IN-
=
GND1
IN+ input current I
IN+
70 200 μA V
VCC1
= 5.0 V, V
IN+
=
V
VCC1
4.3.3 Gate Driver
Note: minimum Peak current rating valid over temperature range!
Table 6 Gate Driver
Parameter Symbol Values Unit Note or Test
Condition
Min. Typ. Max.
High level output peak current
(source)
1EDI10I12MH
1EDI20I12MH
1EDI30I12MH
I
OUT,H,PEAK
1.0
2.0
3.0
1.9
3.5
5.2
A
12)
IN+ = High,
IN- = Low,
V
VCC2
= 15 V
Low level output peak current
1EDI10I12MH
1EDI20I12MH
1EDI30I12MH
I
OUT,L,PEAK
1.0
2.0
3.0
1.7
3.2
4.5
A
12)
IN+ = Low,
IN- = Low,
V
VCC2
= 15 V
11
Parameter is not subject to production test - verified by design/characterization
12
specified min. output current is forced; voltage across the device V
(VCC2 - OUT)
or V
(OUT - GND2)
< V
VCC2
.
EiceDRIVER
1EDI Compact
Single channel IGBT gate driver IC with clamp in wide body package
Electrical Parameters
Datasheet 12 Rev. 2.0
2016-07-05

1EDI10I12MHXUMA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Gate Drivers
Lifecycle:
New from this manufacturer.
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